Manufacturer: Infineon Technologies
Win Source Part Number: 105402-IPD60R600C6AT
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 63W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-TO252-3
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 7.3A (Tc)
Gate-Source Threshold Voltage: 3.5V @ 200μA
Max Gate Charge: 20.5nC @ 10V
Max Input Capacitance: 440pF @ 100V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 600 mOhm @ 2.4A, 10V
Popularity: Medium
Fake Threat In the Open Market: 55 pct.
Supply and Demand Status: Balance
MOSFET N-CH 600V 7.3A TO252-3 Product overview: IPD60R600C6ATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 7.3A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 7.3A, TO252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPD60R600C6ATMA1
N-Channel 600V 7.3A (Tc) 63W (Tc) Surface Mount PG-TO252-3
N-Channel 600V 7.3A (Tc) 63W (Tc) Surface Mount PG-TO252-3
N-Channel 600V 7.3A (Tc) 63W (Tc) Surface Mount PG-TO252-3
MOSFET, N CH, 600V, 7.3A, TO-252-3; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:7.3A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
MOSFET N-CH 600V 7.3A TO252-3
MOSFET N-CH 600V 7.3A TO252-3
MOSFET N-Ch 600V 20.2A DPAK-2
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 105402-IPD60R600C6ATMA1 | 278-IPD60R600C6ATMA1 | IPD60R600C6ATMA1CT-ND | 30T1837 | IPD60R600C6ATMA1 | IPD60R600C6ATMA1 | IPD60R600C6ATMA1 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPD60R600C6ATMA1 | 600V 7.3A TO252 MOSFET Transistor | Single FETs, MOSFETs | Mosfet, N Ch, 600V, 7.3A, To-252-3; Channel Type Infineon | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Single FETs, MOSFETs | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | |||
| V(BR)DSS | 600 volts | 600 volts | 600 volts | ||||
| PD | 63000 milliwatts | 63 milliwatts | 63000 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||
| Package Type | SOT3; TO-252 (DPAK); PG-TO252-3 | Tape & Reel (TR) | TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 | TO-3 | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 |
