MOSFET N-CH 600V 2.6A TO252-3 Product overview: IPD60R3K4CEAUMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 2.6A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 2.6A, TO252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPD60R3K4CEAUMA1
Manufacturer: Infineon Technologies
Win Source Part Number: 874772-IPD60R3K4CEAU
Operating Temperature Range: -40°C ~ 150°C (TJ)
Features: N-Channel 650 V 2.6A (Tc) 29W (Tc) Surface Mount PG-TO252-3
Package: TO-252-3, DPak (2 Leads + Tab), SC-63
Package: Reel - TR
Mounting: Surface Mount
Family Name: IPD60R3
Categories: Discrete Semiconductor Products
Case / Package: PG-TO252-3
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 90 pct.
Supply and Demand Status: Limited
Quantity per package: 2500
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 25 Weeks
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
MOSFET N-CH 600V 2.6A TO252-3
N-Channel 650V 2.6A (Tc) 29W (Tc) Surface Mount PG-TO252-3
N-Channel 650V 2.6A (Tc) 29W (Tc) Surface Mount PG-TO252-3
N-Channel 650V 2.6A (Tc) 29W (Tc) Surface Mount PG-TO252-3
MOSFET, N-CH, 600V, 2.6A, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:2.6A; Drain Source Voltage Vds:600V; On Resistance Rds(on):3.17ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power RoHS Compliant: Yes
MOSFET N-CH 600V 2.6A TO252-3
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | ODG (Origin Data Global) | DigiKey | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-IPD60R3K4CEAUMA1 | 874772-IPD60R3K4CEAUMA1 | IPD60R3K4CEAUMA1 | 448-IPD60R3K4CEAUMA1DKR-ND | 34AC1678 | IPD60R3K4CEAUMA1 | IPD60R3K4CEAUMA1 |
| Product Name | 600V 2.6A TO252 MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPD60R3K4CEAUMA1 | Single FETs, MOSFETs | Single FETs, MOSFETs | Mosfet, N-Ch, 600V, 2.6A, To-252; Transistor Polarity Infineon | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | |||
| MOSFET Operating Mode | Enhancement | ||||||
| V(BR)DSS | 600 volts | 600 volts | |||||
| PD | 29 milliwatts | 29000 milliwatts | |||||
| TJ | -40 to 150 C (-40 to 302 F) | -40 to 150 C (-40 to 302 F) | -40 to 150 C (-40 to 302 F) |
