MOSFET N-CH 600V 1.7A TO252-3 Product overview: IPD60R3K3C6 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 1.7A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 1.7A, TO252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPD60R3K3C6 can be used for catalog matching and distributor lookup.
Manufacturer: Infineon Technologies
Win Source Part Number: 068999-IPD60R3K3C6
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 18.1W (Tc)
Family Name: IPD60R3K3C6
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-TO252-3
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 1.7A (Tc)
Gate-Source Threshold Voltage: 3.5V @ 40μA
Max Gate Charge: 4.6nC @ 10V
Max Input Capacitance: 93pF @ 100V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 3.3 Ohm @ 500mA, 10V
Alternative Parts (Cross-Reference): R6002END3TL1; R6002ENDTL; STD3LN62K3; TSM4N60CP ROG;
Introduction Date: July 21, 2010
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Balance
N-Channel 600V 1.7A (Tc) 18.1W (Tc) Surface Mount PG-TO252-3
MOSFET N-CH 600V 1.7A TO252-3
MOSFET N-CH 600V 1.7A TO252-3
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-IPD60R3K3C6 | 068999-IPD60R3K3C6 | IPD60R3K3C6TR-ND | IPD60R3K3C6 | IPD60R3K3C6 |
| Product Name | 600V 1.7A TO252 MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPD60R3K3C6 | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| PD | 18100 milliwatts | 18100 milliwatts | 18100 milliwatts | ||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||
| Package Type | Tape & Reel (TR) | SOT3; TO-252 (DPAK); PG-TO252-3 | TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Packing Method | Tape & Reel (TR) | Tape Reel; Reel - TR | Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR |
