Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPD60R380E6BTMA1 IPD60R380E6BTMA1

Manufacturer: Infineon Technologies
Win Source Part Number: 130205-IPD60R380E6BTMA1
Packaging: Bulk
Mounting: SMD (SMT)
Technology: MOSFET
FET Feature: Super Junction
Polarity: N-Channel
Power Dissipation (Max): 83W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C to 155°C (TJ)
Case / Package: PG-TO252-3
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 10.6A (Tc)
Gate-Source Threshold Voltage: 3.5V @ 300μA
Max Gate Charge: 32nC @ 10V
Max Input Capacitance: 700pF @ 100V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 380 mOhm @ 3.8A, 10V
Popularity: Medium
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Limited

N-Channel 600V 10.6A (Tc) 83W (Tc) Surface Mount PG-TO252-3

MOSFET N-CH 600V 10.6A TO252-3 Product overview: IPD60R380E6BTMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 10.6A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 10.6A, TO252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPD60R380E6BTMA1 can be used for catalog matching and distributor lookup.