Infineon Technologies AG Power - MOSFET (Si/SiC) - Automotive MOSFET - IPB80N08S2-07 IPB80N08S2-07

Description
Summary of Features N-channel Logic Level - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green package (lead free) Ultra low Rds(on) 100% Avalanche tested Benefits world's lowest RDS at 75V (on) in planar technology highest current capability lowest switching and conduction power losses for highest thermal efficiency robust packages with superior quality and reliability Optimized total gate charge enables smaller driver output stages Potential Applications Valves control Solenoids control Lighting Single-ended motors Simulation/SPICE-Mod el Applications Central inverter solutions Multi-port fuel injection Designers who used this product also designed with IPB180N06S4-H1 | Automotive MOSFET IPG20N06S4L-26A | Automotive MOSFET IPD30N06S2L-13 | Automotive MOSFET IPB180N06S4-H1 | Automotive MOSFET IPG20N06S4L-26A | Automotive MOSFET IPD30N06S2L-13 | Automotive MOSFET IPB180N06S4-H1 | Automotive MOSFET IPG20N06S4L-26A | Automotive MOSFET IPD30N06S2L-13 | Automotive MOSFET
  • Power - MOSFET (Si/SiC) - Automotive MOSFET - IPB80N08S2-07 - IPB80N08S2-07 - Infineon Technologies AG
    Infineon Technologies AG
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPB80N08S2-07 - 1186087-IPB80N08S2-07 - Win Source Electronics
    Win Source Electronics
Request a Quote Datasheet
Description
Summary of Features N-channel Logic Level - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green package (lead free) Ultra low Rds(on) 100% Avalanche tested Benefits world's lowest RDS at 75V (on) in planar technology highest current capability lowest switching and conduction power losses for highest thermal efficiency robust packages with superior quality and reliability Optimized total gate charge enables smaller driver output stages Potential Applications Valves control Solenoids control Lighting Single-ended motors Simulation/SPICE-Mod el Applications Central inverter solutions Multi-port fuel injection Designers who used this product also designed with IPB180N06S4-H1 | Automotive MOSFET IPG20N06S4L-26A | Automotive MOSFET IPD30N06S2L-13 | Automotive MOSFET IPB180N06S4-H1 | Automotive MOSFET IPG20N06S4L-26A | Automotive MOSFET IPD30N06S2L-13 | Automotive MOSFET IPB180N06S4-H1 | Automotive MOSFET IPG20N06S4L-26A | Automotive MOSFET IPD30N06S2L-13 | Automotive MOSFET
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Power - MOSFET (Si/SiC) - Automotive MOSFET - IPB80N08S2-07 - IPB80N08S2-07 - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
Power - MOSFET (Si/SiC) - Automotive MOSFET - IPB80N08S2-07
IPB80N08S2-07
Power - MOSFET (Si/SiC) - Automotive MOSFET - IPB80N08S2-07 IPB80N08S2-07
Summary of Features N-channel Logic Level - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green package (lead free) Ultra low Rds(on) 100% Avalanche tested Benefits world's lowest RDS at 75V (on) in planar technology highest current capability lowest switching and conduction power losses for highest thermal efficiency robust packages with superior quality and reliability Optimized total gate charge enables smaller driver output stages Potential Applications Valves control Solenoids control Lighting Single-ended motors Simulation/SPICE-Mod el Applications Central inverter solutions Multi-port fuel injection Designers who used this product also designed with IPB180N06S4-H1 | Automotive MOSFET IPG20N06S4L-26A | Automotive MOSFET IPD30N06S2L-13 | Automotive MOSFET IPB180N06S4-H1 | Automotive MOSFET IPG20N06S4L-26A | Automotive MOSFET IPD30N06S2L-13 | Automotive MOSFET IPB180N06S4-H1 | Automotive MOSFET IPG20N06S4L-26A | Automotive MOSFET IPD30N06S2L-13 | Automotive MOSFET

Summary of Features

  • N-channel Logic Level - Enhancement mode
  • Automotive AEC Q101 qualified
  • MSL1 up to 260°C peak reflow
  • 175°C operating temperature
  • Green package (lead free)
  • Ultra low Rds(on)
  • 100% Avalanche tested

Benefits

  • world's lowest RDS at 75V (on) in planar technology
  • highest current capability
  • lowest switching and conduction power losses for highest thermal efficiency
  • robust packages with superior quality and reliability
  • Optimized total gate charge enables smaller driver output stages

Potential Applications

  • Valves control
  • Solenoids control
  • Lighting
  • Single-ended motors

Simulation/SPICE-Model


Applications

  • Central inverter solutions
  • Multi-port fuel injection

Designers who used this product also designed with


  • IPB180N06S4-H1 |
    Automotive MOSFET
  • IPG20N06S4L-26A |
    Automotive MOSFET
  • IPD30N06S2L-13 |
    Automotive MOSFET
  • IPB180N06S4-H1 |
    Automotive MOSFET
  • IPG20N06S4L-26A |
    Automotive MOSFET
  • IPD30N06S2L-13 |
    Automotive MOSFET
  • IPB180N06S4-H1 |
    Automotive MOSFET
  • IPG20N06S4L-26A |
    Automotive MOSFET
  • IPD30N06S2L-13 |
    Automotive MOSFET
Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPB80N08S2-07 - 1186087-IPB80N08S2-07 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPB80N08S2-07
1186087-IPB80N08S2-07
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPB80N08S2-07 1186087-IPB80N08S2-07
Manufacturer: Infineon Technologies Win Source Part Number: 1186087-IPB80N08S2-0 7 Manufacturer Homepage: www.infineon.com Popularity: Medium Fake Threat In the Open Market: 29 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 1186087-IPB80N08S2-07
Manufacturer Homepage: www.infineon.com
Popularity: Medium
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Balance

Buy Now
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
IPB80N08S2-07
MOSFET IPB80N08S2-07
MOSFET N-Ch 75V 80A D2PAK-2 OptiMOS

MOSFET N-Ch 75V 80A D2PAK-2 OptiMOS

Buy Now Datasheet

Technical Specifications

  Infineon Technologies AG Win Source Electronics VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IPB80N08S2-07 1186087-IPB80N08S2-07 IPB80N08S2-07
Product Name Power - MOSFET (Si/SiC) - Automotive MOSFET - IPB80N08S2-07 TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPB80N08S2-07 MOSFET
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
VGS(off) 2.1 to 4 volts
rDS(on) 0.0071 ohms
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