Infineon Technologies AG Single FETs, MOSFETs IPB80N06S3L-05

Description
N-Channel 55V 80A (Tc) 165W (Tc) Surface Mount PG-TO263-3-2
Request a Quote Datasheet
Description
N-Channel 55V 80A (Tc) 165W (Tc) Surface Mount PG-TO263-3-2
Request a Quote Datasheet

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Description
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Single FETs, MOSFETs - IPB80N06S3L-05INTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IPB80N06S3L-05INTR-ND
Single FETs, MOSFETs IPB80N06S3L-05INTR-ND
N-Channel 55V 80A (Tc) 165W (Tc) Surface Mount PG-TO263-3-2

N-Channel 55V 80A (Tc) 165W (Tc) Surface Mount PG-TO263-3-2

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TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPB80N06S3L-05 - 1045830-IPB80N06S3L-05 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPB80N06S3L-05
1045830-IPB80N06S3L-05
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPB80N06S3L-05 1045830-IPB80N06S3L-05
Manufacturer: Infineon Technologies Win Source Part Number: 1045830-IPB80N06S3L- 05 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 165W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: PG-TO263-3-2 Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 55V Continuous Drain Current at 25°C: 80A (Tc) Gate-Source Threshold Voltage: 2.2V @ 115μA Max Gate Charge: 273nC @ 10V Max Input Capacitance: 13060pF @ 25V Maximum Gate-Source Voltage: ±16V Maximum Rds On at Id,Vgs: 4.5 mOhm @ 69A, 10V Popularity: Medium Fake Threat In the Open Market: 55 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 1045830-IPB80N06S3L-05
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 165W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: PG-TO263-3-2
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 55V
Continuous Drain Current at 25°C: 80A (Tc)
Gate-Source Threshold Voltage: 2.2V @ 115μA
Max Gate Charge: 273nC @ 10V
Max Input Capacitance: 13060pF @ 25V
Maximum Gate-Source Voltage: ±16V
Maximum Rds On at Id,Vgs: 4.5 mOhm @ 69A, 10V
Popularity: Medium
Fake Threat In the Open Market: 55 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IPB80N06S3L-05 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IPB80N06S3L-05
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IPB80N06S3L-05
MOSFET N-CH 55V 80A TO263-3

MOSFET N-CH 55V 80A TO263-3

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number IPB80N06S3L-05INTR-ND 1045830-IPB80N06S3L-05 IPB80N06S3L-05
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPB80N06S3L-05 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-263; SOT3; PG-TO263-3-2 273 nC @ 10 V
Transistor Grade / Operating Range Automotive
V(BR)DSS 55 volts
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