Manufacturer: Infineon Technologies
Win Source Part Number: 1045830-IPB80N06S3L-
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 165W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: PG-TO263-3-2
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 55V
Continuous Drain Current at 25°C: 80A (Tc)
Gate-Source Threshold Voltage: 2.2V @ 115μA
Max Gate Charge: 273nC @ 10V
Max Input Capacitance: 13060pF @ 25V
Maximum Gate-Source Voltage: ±16V
Maximum Rds On at Id,Vgs: 4.5 mOhm @ 69A, 10V
Popularity: Medium
Fake Threat In the Open Market: 55 pct.
Supply and Demand Status: Balance
N-Channel 55V 80A (Tc) 165W (Tc) Surface Mount PG-TO263-3-2
MOSFET N-CH 55V 80A TO263-3
| Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors |
| Product Number | 1045830-IPB80N06S3L-05 | IPB80N06S3L-05INTR-ND | IPB80N06S3L-05 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPB80N06S3L-05 | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | |
| V(BR)DSS | 55 volts | ||
| PD | 165000 milliwatts | ||
| TJ | -55 to 175 C (-67 to 347 F) |
