Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPB80N06S3-07 IPB80N06S3-07

Description
Manufacturer: Infineon Technologies Win Source Part Number: 1045829-IPB80N06S3-0 7 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 135W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: PG-TO263-3-2 Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 55V Continuous Drain Current at 25°C: 80A (Tc) Gate-Source Threshold Voltage: 4V @ 80μA Max Gate Charge: 170nC @ 10V Max Input Capacitance: 7768pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 6.5 mOhm @ 51A, 10V Popularity: Medium Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Balance
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPB80N06S3-07 - 1045829-IPB80N06S3-07 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - IPB80N06S3-07-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IPB80N06S3-07 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
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Description
Manufacturer: Infineon Technologies Win Source Part Number: 1045829-IPB80N06S3-0 7 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 135W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: PG-TO263-3-2 Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 55V Continuous Drain Current at 25°C: 80A (Tc) Gate-Source Threshold Voltage: 4V @ 80μA Max Gate Charge: 170nC @ 10V Max Input Capacitance: 7768pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 6.5 mOhm @ 51A, 10V Popularity: Medium Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

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Product
Description
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPB80N06S3-07 - 1045829-IPB80N06S3-07 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPB80N06S3-07
1045829-IPB80N06S3-07
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPB80N06S3-07 1045829-IPB80N06S3-07
Manufacturer: Infineon Technologies Win Source Part Number: 1045829-IPB80N06S3-0 7 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 135W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: PG-TO263-3-2 Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 55V Continuous Drain Current at 25°C: 80A (Tc) Gate-Source Threshold Voltage: 4V @ 80μA Max Gate Charge: 170nC @ 10V Max Input Capacitance: 7768pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 6.5 mOhm @ 51A, 10V Popularity: Medium Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 1045829-IPB80N06S3-07
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 135W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: PG-TO263-3-2
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 55V
Continuous Drain Current at 25°C: 80A (Tc)
Gate-Source Threshold Voltage: 4V @ 80μA
Max Gate Charge: 170nC @ 10V
Max Input Capacitance: 7768pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 6.5 mOhm @ 51A, 10V
Popularity: Medium
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - IPB80N06S3-07-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IPB80N06S3-07-ND
Single FETs, MOSFETs IPB80N06S3-07-ND
N-Channel 55V 80A (Tc) 135W (Tc) Surface Mount PG-TO263-3-2

N-Channel 55V 80A (Tc) 135W (Tc) Surface Mount PG-TO263-3-2

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IPB80N06S3-07 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IPB80N06S3-07
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IPB80N06S3-07
MOSFET N-CH 55V 80A TO263-3

MOSFET N-CH 55V 80A TO263-3

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number 1045829-IPB80N06S3-07 IPB80N06S3-07-ND IPB80N06S3-07
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPB80N06S3-07 Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 55 volts
PD 135000 milliwatts
TJ -55 to 175 C (-67 to 347 F)
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