Infineon Technologies AG Single FETs, MOSFETs IPB80N06S2L09ATMA2

N-Channel 55V 80A (Tc) 190W (Tc) Surface Mount PG-TO263-3-2

Win Source Part Number: 992466-IPB80N06S2L09ATMA2
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: OptiMOS™
Package: Tape & Reel (TR)
Standard Package: 1,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 55 V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 52A, 10V
Vgs(th) (Max) @ Id: 2V @ 125µA
Power Dissipation (Max): 190W (Tc)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: PG-TO263-3-2
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2620 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 72 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Infineon Technologies
Other Names: SP001061720
Base Product Number: IPB80N
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V

MOSFET N-CH 55V 80A TO263-3 Product overview: IPB80N06S2L09ATMA2 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 55V, 80A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 55V, 80A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPB80N06S2L09ATMA2 can be used for catalog matching and distributor lookup.