MOSFET N-CH 55V 80A TO263-3 Product overview: IPB80N06S2L07ATMA3 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 55V, 80A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 55V, 80A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPB80N06S2L07ATM
N-Channel 55V 80A (Tc) 210W (Tc) Surface Mount PG-TO263-3-2
N-Channel 55V 80A (Tc) 210W (Tc) Surface Mount PG-TO263-3-2
N-Channel 55V 80A (Tc) 210W (Tc) Surface Mount PG-TO263-3-2
MOSFET N-CH 55V 80A TO263-3
Manufacturer: Infineon Technologies
Win Source Part Number: 1325407-IPB80N06S2L0
Category: Discrete Semiconductor Products>Transistors
Packaging: Reel - TR
Standard Package: 1,000
Mounting: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 55 V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 60A, 10V
Vgs(th) (Max) @ Id: 2V @ 150µA
Power Dissipation (Max): 210W (Tc)
Supplier Device Package: PG-TO263-3-2
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3160 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
Case / Package: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
ECCN: EAR99
Fake Threat In the Open Market: 76
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: 448-IPB80N06S2L07ATM
Base Product Number: IPB80N
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
RoHS Status: ROHS3 Compliant
MOSFET, AEC-Q101, N-CH, 55V, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:55V; On Resistance Rds(on):0.0053ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.6V; Power RoHS Compliant: Yes
MOSFET N-CH 55V 80A TO263-3
| ERSAELECTRONICS PTE. LTD. | DigiKey | ODG (Origin Data Global) | Win Source Electronics | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-IPB80N06S2L07ATMA3 | 448-IPB80N06S2L07ATMA3TR-ND | IPB80N06S2L07ATMA3 | 1325407-IPB80N06S2L07ATMA3 | 34AC1661 | IPB80N06S2L07ATMA3 | IPB80N06S2L07ATMA3 |
| Product Name | 55V 80A MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Mosfet, Aec-Q101, N-Ch, 55V, To-263; Transistor Polarity Infineon | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | |||
| MOSFET Operating Mode | Enhancement | ||||||
| V(BR)DSS | 55 volts | 55 volts | |||||
| PD | 210 milliwatts | 210000 milliwatts | 210000 milliwatts | ||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) |
