Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPB80N04S3H4ATMA1 IPB80N04S3H4ATMA1

Manufacturer: Infineon Technologies
Win Source Part Number: 1045823-IPB80N04S3H4ATMA1
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 115W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Not For New Designs
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: PG-TO263-3-2
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 80A (Tc)
Gate-Source Threshold Voltage: 4V @ 65μA
Max Gate Charge: 60nC @ 10V
Max Input Capacitance: 3900pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 4.5 mOhm @ 80A, 10V
Popularity: Medium
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Balance

MOSFET N-CH 40V 80A TO263-3 Product overview: IPB80N04S3H4ATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 80A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 80A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPB80N04S3H4ATMA1 can be used for catalog matching and distributor lookup.

N-Channel 40V 80A (Tc) 115W (Tc) Surface Mount PG-TO263-3-2