MOSFET N-CH 650V 6A D2PAK Product overview: IPB65R660CFDAATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 6A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 6A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPB65R660CFDAATM
N-Channel 650V 6A (Tc) 62.5W (Tc) Surface Mount PG-TO263-3
N-Channel 650V 6A (Tc) 62.5W (Tc) Surface Mount PG-TO263-3
N-Channel 650V 6A (Tc) 62.5W (Tc) Surface Mount PG-TO263-3
Alternative Parts (Cross-Reference): Cross
Manufacturer: Infineon Technologies
Category: Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Series: Automotive, AEC-Q101, CoolMOS™
Package: Tape & Reel (TR)
Vgs (Max): ±20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-3
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
MOSFET N-CH 650V 6A D2PAK
MOSFET, N-CH, 650V, 6A, TO-263 ROHS COMPLIANT: YES
MOSFET N-CH 650V 6A D2PAK
| RS Components, Ltd. | ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | VAST STOCK CO., LIMITED | ODG (Origin Data Global) | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 2732999 | 278-IPB65R660CFDAATMA1 | 448-IPB65R660CFDAATMA1DKR-ND | IPB65R660CFDAATMA1 | IPB65R660CFDAATMA1 | 80AH9596 | IPB65R660CFDAATMA1 | |
| Product Name | MOSFETs | 650V 6A MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs | MOSFET | Single FETs, MOSFETs | Mosfet, N-Ch, 650V, 6A, To-263 Rohs Compliant Infineon | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Package Type | TO-263; TO-263 | Tape & Reel (TR) | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | SOT3 | TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-3; TO-263; TO-252 (DPAK) | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | |||||
| MOSFET Operating Mode | Enhancement | |||||||
| V(BR)DSS | 650 volts | 650 volts | ||||||
| PD | 62.5 milliwatts | 62500 milliwatts |
