N-Channel 650V 11.4A (Tc) 104.2W (Tc) Surface Mount PG-TO263-3
MOSFET N-CH 650V 11.4A D2PAK
MOSFET, N-CH, 650V, 11.4A, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:11.4A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.28ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power RoHS Compliant: Yes
MOSFET N-Ch 650V 11.4A D2PAK-2 CoolMOS CFD2
| DigiKey | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|
| Product Category | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IPB65R310CFDATMA1TR-ND | IPB65R310CFDATMA1 | 34AC1659 | IPB65R310CFDATMA1 |
| Product Name | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 650V, 11.4A, To-263; Transistor Polarity Infineon | MOSFET |
| Polarity | N-Channel |
