Infineon Technologies AG Automotive MOSFET IPB65R190CFDA

Description
650V CoolMOS™ CFDA Superjunction (SJ) MOSFET is Infineon's second generation of market leading automotive qualified high voltage CoolMOS™ power MOSFETs. In addition to the well-known attributes of high quality and reliability required by the automotive industry, the 650V CoolMOS™ CFDA series provides also an integrated fast body diode. Summary of Features First 650V automotive qualified technology with integrated fast body diode on the market Limited voltage overshoot during hard commutation – self limiting di/dt and dv/dt Low gate charge value Q g Low Q rr at repetitive commutation on body diode & low Q oss Reduced turn on and turn of delay times Compliant to AEC Q101 standard Benefits Increased safety margin due to higher breakdown voltage Reduced EMI appearance and easy to design in Better light load efficiency Lower switching losses Higher switching frequency and/or higher duty cycle possible High quality and reliability Potential Applications Unidirectional and bidirectional DC-DC converter Battery charger HID lighting Applications High-voltage DC-DC converter for electric vehicles On-board charging (OBC) for electric vehicles Designers who used this product also designed with TLE6251D | Automotive CAN transceivers IPD70N12S3-11 | Automotive MOSFET IAUT260N10S5N019 | Automotive MOSFET AIKB40N65DH5 | Automotive IGBT discretes TLE6251D | Automotive CAN transceivers IPD70N12S3-11 | Automotive MOSFET IAUT260N10S5N019 | Automotive MOSFET AIKB40N65DH5 | Automotive IGBT discretes TLE6251D | Automotive CAN transceivers IPD70N12S3-11 | Automotive MOSFET IAUT260N10S5N019 | Automotive MOSFET AIKB40N65DH5 | Automotive IGBT discretes
Request a Quote Datasheet
Description
650V CoolMOS™ CFDA Superjunction (SJ) MOSFET is Infineon's second generation of market leading automotive qualified high voltage CoolMOS™ power MOSFETs. In addition to the well-known attributes of high quality and reliability required by the automotive industry, the 650V CoolMOS™ CFDA series provides also an integrated fast body diode. Summary of Features First 650V automotive qualified technology with integrated fast body diode on the market Limited voltage overshoot during hard commutation – self limiting di/dt and dv/dt Low gate charge value Q g Low Q rr at repetitive commutation on body diode & low Q oss Reduced turn on and turn of delay times Compliant to AEC Q101 standard Benefits Increased safety margin due to higher breakdown voltage Reduced EMI appearance and easy to design in Better light load efficiency Lower switching losses Higher switching frequency and/or higher duty cycle possible High quality and reliability Potential Applications Unidirectional and bidirectional DC-DC converter Battery charger HID lighting Applications High-voltage DC-DC converter for electric vehicles On-board charging (OBC) for electric vehicles Designers who used this product also designed with TLE6251D | Automotive CAN transceivers IPD70N12S3-11 | Automotive MOSFET IAUT260N10S5N019 | Automotive MOSFET AIKB40N65DH5 | Automotive IGBT discretes TLE6251D | Automotive CAN transceivers IPD70N12S3-11 | Automotive MOSFET IAUT260N10S5N019 | Automotive MOSFET AIKB40N65DH5 | Automotive IGBT discretes TLE6251D | Automotive CAN transceivers IPD70N12S3-11 | Automotive MOSFET IAUT260N10S5N019 | Automotive MOSFET AIKB40N65DH5 | Automotive IGBT discretes
Request a Quote Datasheet

Suppliers

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Product
Description
Supplier Links
Automotive MOSFET - IPB65R190CFDA - Infineon Technologies AG
Neubiberg, Germany
Automotive MOSFET
IPB65R190CFDA
Automotive MOSFET IPB65R190CFDA
650V CoolMOS™ CFDA Superjunction (SJ) MOSFET is Infineon's second generation of market leading automotive qualified high voltage CoolMOS™ power MOSFETs. In addition to the well-known attributes of high quality and reliability required by the automotive industry, the 650V CoolMOS™ CFDA series provides also an integrated fast body diode. Summary of Features First 650V automotive qualified technology with integrated fast body diode on the market Limited voltage overshoot during hard commutation – self limiting di/dt and dv/dt Low gate charge value Q g Low Q rr at repetitive commutation on body diode & low Q oss Reduced turn on and turn of delay times Compliant to AEC Q101 standard Benefits Increased safety margin due to higher breakdown voltage Reduced EMI appearance and easy to design in Better light load efficiency Lower switching losses Higher switching frequency and/or higher duty cycle possible High quality and reliability Potential Applications Unidirectional and bidirectional DC-DC converter Battery charger HID lighting Applications High-voltage DC-DC converter for electric vehicles On-board charging (OBC) for electric vehicles Designers who used this product also designed with TLE6251D | Automotive CAN transceivers IPD70N12S3-11 | Automotive MOSFET IAUT260N10S5N019 | Automotive MOSFET AIKB40N65DH5 | Automotive IGBT discretes TLE6251D | Automotive CAN transceivers IPD70N12S3-11 | Automotive MOSFET IAUT260N10S5N019 | Automotive MOSFET AIKB40N65DH5 | Automotive IGBT discretes TLE6251D | Automotive CAN transceivers IPD70N12S3-11 | Automotive MOSFET IAUT260N10S5N019 | Automotive MOSFET AIKB40N65DH5 | Automotive IGBT discretes

650V CoolMOS™ CFDA Superjunction (SJ) MOSFET is Infineon's second generation of market leading automotive qualified high voltage CoolMOS™ power MOSFETs. In addition to the well-known attributes of high quality and reliability required by the automotive industry, the 650V CoolMOS™ CFDA series provides also an integrated fast body diode.


Summary of Features

  • First 650V automotive qualified technology with integrated fast body diode on the market
  • Limited voltage overshoot during hard commutation – self limiting di/dt and dv/dt
  • Low gate charge value Q g
  • Low Q rr at repetitive commutation on body diode & low Q oss
  • Reduced turn on and turn of delay times
  • Compliant to AEC Q101 standard

Benefits

  • Increased safety margin due to higher breakdown voltage
  • Reduced EMI appearance and easy to design in
  • Better light load efficiency
  • Lower switching losses
  • Higher switching frequency and/or higher duty cycle possible
  • High quality and reliability

Potential Applications

  • Unidirectional and bidirectional DC-DC converter
  • Battery charger
  • HID lighting

Applications

  • High-voltage DC-DC converter for electric vehicles
  • On-board charging (OBC) for electric vehicles

Designers who used this product also designed with


  • TLE6251D |
    Automotive CAN transceivers
  • IPD70N12S3-11 |
    Automotive MOSFET
  • IAUT260N10S5N019 |
    Automotive MOSFET
  • AIKB40N65DH5 |
    Automotive IGBT discretes
  • TLE6251D |
    Automotive CAN transceivers
  • IPD70N12S3-11 |
    Automotive MOSFET
  • IAUT260N10S5N019 |
    Automotive MOSFET
  • AIKB40N65DH5 |
    Automotive IGBT discretes
  • TLE6251D |
    Automotive CAN transceivers
  • IPD70N12S3-11 |
    Automotive MOSFET
  • IAUT260N10S5N019 |
    Automotive MOSFET
  • AIKB40N65DH5 |
    Automotive IGBT discretes
Supplier's Site Datasheet
Transistors IPB65R190CFDA
MOSFET N-Ch 650V 57.2A D2PAK-2

MOSFET N-Ch 650V 57.2A D2PAK-2

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET N-Ch 650V 57.2A D2PAK-2

MOSFET N-Ch 650V 57.2A D2PAK-2

Buy Now Datasheet

Technical Specifications

  Infineon Technologies AG ODG (Origin Data Global) VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IPB65R190CFDA IPB65R190CFDA IPB65R190CFDA
Product Name Automotive MOSFET Transistors MOSFET
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
VGS(off) 3.5 to 4.5 volts
rDS(on) 0.1900 ohms
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