N-Channel 650V 13A (Tc) 72W (Tc) Surface Mount PG-TO263-3
N-Channel 650V 13A (Tc) 72W (Tc) Surface Mount PG-TO263-3
N-Channel 650V 13A (Tc) 72W (Tc) Surface Mount PG-TO263-3
MOSFET N-CH 650V 13A TO263-3 Product overview: IPB65R190C7ATMA2 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 13A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 13A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPB65R190C7ATMA2
Win Source Part Number: 1179609-IPB65R190C7A
Category: Discrete Semiconductor Products>Transistors
Series: CoolMOS™ C7
Package: Tape & Reel
Standard Package: 1,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 5.7A, 10V
Vgs(th) (Max) @ Id: 4V @ 290µA
Power Dissipation (Max): 72W (Tc)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: PG-TO263-3
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 400 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Alternative Parts (Cross-Reference): IPB65R190C7; IPB65R190C7ATMA1; SP000929424;
ECCN: EAR99
Fake Threat In the Open Market: 81 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Infineon Technologies
Other Names: IPB65R190C7ATMA2CT,I
Base Product Number: IPB65R190
Drive Voltage (Max Rds On, Min Rds On): 10V
MOSFET, N-CH, 650V, 13A, 150DEG C, 72W; Transistor Polarity:N Channel; Continuous Drain Current Id:13A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.168ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power RoHS Compliant: Yes
MOSFET N-CH 650V 13A TO263-3
MOSFET N-CH 650V 13A TO263-3
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | RS Components, Ltd. | Newark, An Avnet Company | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | IPB65R190C7ATMA2DKR-ND | 278-IPB65R190C7ATMA2 | 1179609-IPB65R190C7ATMA2 | 2224658 | 99AC3983 | IPB65R190C7ATMA2 | IPB65R190C7ATMA2 |
| Product Name | Single FETs, MOSFETs | 650V 13A MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | MOSFETs | Mosfet, N-Ch, 650V, 13A, 150Deg C, 72W; Transistor Polarity Infineon | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | |||
| Package Type | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | SOT3 | TO-263; TO-263 | TO-3 | TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | Surface Mount |
| MOSFET Operating Mode | Enhancement | ||||||
| V(BR)DSS | 650 volts | 650 volts | |||||
| PD | 72 milliwatts | 72000 milliwatts | 72000 milliwatts |
