Infineon Technologies AG Single FETs, MOSFETs IPB65R099C6ATMA1

N-Channel 650V 38A (Tc) 278W (Tc) Surface Mount PG-TO263-3

Manufacturer: Infineon Technologies
Win Source Part Number: 136466-IPB65R099C6ATMA1
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 278W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-TO263
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 650V
Continuous Drain Current at 25°C: 38A (Tc)
Gate-Source Threshold Voltage: 3.5V @ 1.2mA
Max Gate Charge: 127nC @ 10V
Max Input Capacitance: 2780pF @ 100V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 99 mOhm @ 12.8A, 10V
Popularity: Medium
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Limited

MOSFET N-CH 650V 38A D2PAK Product overview: IPB65R099C6ATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 38A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 38A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPB65R099C6ATMA1 can be used for catalog matching and distributor lookup.