Manufacturer: Infineon Technologies
Win Source Part Number: 1325352-IPB65R095C7A
Category: Discrete Semiconductor Products>Transistors
Packaging: Reel - TR
Standard Package: 1,000
Mounting: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 11.8A, 10V
Vgs(th) (Max) @ Id: 4V @ 590µA
Power Dissipation (Max): 128W (Tc)
Supplier Device Package: PG-TO263-3
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2140 pF @ 400 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Case / Package: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
ECCN: EAR99
Fake Threat In the Open Market: 77
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: IPB65R095C7ATMA2CT,I
Base Product Number: IPB65R095
Drive Voltage (Max Rds On, Min Rds On): 10V
RoHS Status: ROHS3 Compliant
MOSFET N-CH 650V 24A TO263-3 Product overview: IPB65R095C7ATMA2 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 24A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 24A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPB65R095C7ATMA2
N-Channel 650V 24A (Tc) 128W (Tc) Surface Mount PG-TO263-3
N-Channel 650V 24A (Tc) 128W (Tc) Surface Mount PG-TO263-3
N-Channel 650V 24A (Tc) 128W (Tc) Surface Mount PG-TO263-3
MOSFET N-CH 650V 24A TO263-3
MOSFET, N-CH, 650V, 24A, 128W, 150 DEG C; Transistor Polarity:N Channel; Continuous Drain Current Id:24A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.084ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power RoHS Compliant: Yes
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | RS Components, Ltd. | RS Components, Ltd. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1325352-IPB65R095C7ATMA2 | 278-IPB65R095C7ATMA2 | 2172505 | 2172506P | IPB65R095C7ATMA2CT-ND | IPB65R095C7ATMA2 | 02AH4433 |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | 650V 24A MOSFET Transistor | MOSFETs | MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 650V, 24A, 128W, 150 Deg C; Transistor Polarity Infineon |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel | |||
| PD | 128000 milliwatts | 128 milliwatts | |||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||||
| Package Type | TO-263; SOT3; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | TO-263; D2pak (to-263) | TO-263; TO-263 | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-3 |
| Packing Method | Tape Reel; Reel - TR | Tape & Reel (TR) | Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR |
