Infineon Technologies AG Single FETs, MOSFETs IPB65R095C7ATMA1

Description
N-Channel 650V 24A (Tc) 128W (Tc) Surface Mount PG-TO263-3
Request a Quote Datasheet
Description
N-Channel 650V 24A (Tc) 128W (Tc) Surface Mount PG-TO263-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IPB65R095C7ATMA1-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IPB65R095C7ATMA1-ND
Single FETs, MOSFETs IPB65R095C7ATMA1-ND
N-Channel 650V 24A (Tc) 128W (Tc) Surface Mount PG-TO263-3

N-Channel 650V 24A (Tc) 128W (Tc) Surface Mount PG-TO263-3

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IPB65R095C7ATMA1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IPB65R095C7ATMA1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IPB65R095C7ATMA1
MOSFET N-CH 650V 24A D2PAK

MOSFET N-CH 650V 24A D2PAK

Supplier's Site

Technical Specifications

  DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors RF Transistors
Product Number IPB65R095C7ATMA1-ND IPB65R095C7ATMA1
Product Name Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel
Unlock Full Specs
to access all available technical data

Similar Products

GaAs Fet Switches - KCB825 - Micross Components, Inc.
Micross Components, Inc.
Specs
Operating Frequency 20 to 4000 MHz
View Details
DC - 2 GHz, 285 Watt, 36 V GaN RF Power Transistor - T1G2028536-FL - Qorvo
Specs
Transistor Technology / Material GaN
Package Type NI-780
Power Gain 19 dB
View Details
2 suppliers