Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPB60R600C6 IPB60R600C6

Manufacturer: Infineon Technologies Win Source Part Number: 1045806-IPB60R600C6 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 63W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-TO263-2 Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 7.3A (Tc) Gate-Source Threshold Voltage: 3.5V @ 200μA Max Gate Charge: 20.5nC @ 10V Max Input Capacitance: 440pF @ 100V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 600 mOhm @ 2.4A, 10V Popularity: Medium Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Sufficient