Infineon Technologies AG Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single IPB60R380P6ATMA1

Win Source Part Number: 1315880-IPB60R380P6ATMA1
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: CoolMOS™ P6
Package: Tape & Reel
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 320µA
Power Dissipation (Max): 83W (Tc)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: PG-TO263-3
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 877 pF @ 100 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 80 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Infineon Technologies
Base Product Number: IPB60R
Product Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V

N-Channel 600V 10.6A (Tc) 83W (Tc) Surface Mount PG-TO263-3

MOSFET N-CH 600V 10.6A D2PAK Product overview: IPB60R380P6ATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 10.6A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 10.6A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPB60R380P6ATMA1 can be used for catalog matching and distributor lookup.