N-Channel 600V 18A (Tc) 72W (Tc) Surface Mount PG-TO263-3
N-Channel 600V 18A (Tc) 72W (Tc) Surface Mount PG-TO263-3
N-Channel 600V 18A (Tc) 72W (Tc) Surface Mount PG-TO263-3
Manufacturer: Infineon Technologies
Win Source Part Number: 874743-IPB60R180P7AT
Series: CoolMOS™ P7
Operating Temperature Range: -55°C ~ 150°C (TJ)
Features: N-Channel 600 V 18A (Tc) 72W (Tc) Surface Mount PG-TO263-3
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Package: Reel - TR
Mounting: Surface Mount
Family Name: IPB60R180
Categories: Discrete Semiconductor Products
Case / Package: PG-TO263-3
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Limited
Quantity per package: 1000
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 25 Weeks
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: IPB60R180P7ATMA1-ND,
MOSFET N-CH 600V 18A D2PAK
MOSFET N-CH 600V 18A D2PAK
MOSFET, N-CH, 600V, 18A, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:18A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.145ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power RoHS Compliant: Yes
| DigiKey | Win Source Electronics | RS Components, Ltd. | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IPB60R180P7ATMA1TR-ND | 874743-IPB60R180P7ATMA1 | 2224894 | IPB60R180P7ATMA1 | IPB60R180P7ATMA1 | 49AC7997 | IPB60R180P7ATMA1 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPB60R180P7ATMA1 | MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 600V, 18A, To-263; Transistor Polarity Infineon | MOSFET |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | ||||
| Package Type | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | SOT3; PG-TO263-3 | TO-263; TO-263 | TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-3; TO-263; TO-252 (DPAK) | |
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 600 volts |
