MOSFET N-CH 600V 18A D2PAK
Manufacturer: Infineon Technologies
Win Source Part Number: 874743-IPB60R180P7AT
Series: CoolMOS™ P7
Operating Temperature Range: -55°C ~ 150°C (TJ)
Features: N-Channel 600 V 18A (Tc) 72W (Tc) Surface Mount PG-TO263-3
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Package: Reel - TR
Mounting: Surface Mount
Family Name: IPB60R180
Categories: Discrete Semiconductor Products
Case / Package: PG-TO263-3
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Limited
Quantity per package: 1000
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 25 Weeks
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: IPB60R180P7ATMA1-ND,
N-Channel 600V 18A (Tc) 72W (Tc) Surface Mount PG-TO263-3
N-Channel 600V 18A (Tc) 72W (Tc) Surface Mount PG-TO263-3
N-Channel 600V 18A (Tc) 72W (Tc) Surface Mount PG-TO263-3
MOSFET N-CH 600V 18A D2PAK
MOSFET, N-CH, 600V, 18A, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:18A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.145ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power RoHS Compliant: Yes
| ODG (Origin Data Global) | Win Source Electronics | DigiKey | RS Components, Ltd. | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IPB60R180P7ATMA1 | 874743-IPB60R180P7ATMA1 | IPB60R180P7ATMA1TR-ND | 2224894 | IPB60R180P7ATMA1 | IPB60R180P7ATMA1 | 49AC7997 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPB60R180P7ATMA1 | Single FETs, MOSFETs | MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 600V, 18A, To-263; Transistor Polarity Infineon |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 600 volts | ||||||
| IDSS | 18000 milliamps | 18000 milliamps | |||||
| PD | 72000 milliwatts |
