MOSFET N-CH 600V 23.8A D2PAK Product overview: IPB60R160P6ATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 23.8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 23.8A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPB60R160P6ATMA1
Manufacturer: Infineon Technologies
Win Source Part Number: 874741-IPB60R160P6AT
Series: CoolMOS™ P6
Operating Temperature Range: -55°C ~ 150°C (TJ)
Features: N-Channel 600 V 23.8A (Tc) 176W (Tc) Surface Mount PG-TO263-3
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Package: Reel - TR
Mounting: Surface Mount
Family Name: IPB60R160
Categories: Discrete Semiconductor Products
Case / Package: PG-TO263-3
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Limited
Quantity per package: 1000
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 25 Weeks
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
MOSFET N-CH 600V 23.8A D2PAK
N-Channel 600V 23.8A (Tc) 176W (Tc) Surface Mount PG-TO263-3
MOSFET N-CH 600V 23.8A D2PAK
MOSFET N-Ch 600V 23A CoolMOS P6 TO-263
MOSFET N-Ch 600V 23A CoolMOS P6 TO-263
MOSFET N-Ch 600V 23A CoolMOS P6 TO-263
POWER FIELD-EFFECT TRANSISTOR, 600V, 0.16OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-263AB, 6R160P6 MARKING CODE. FREE 2 YEAR RADWELL WARRANTY
MOSFET HIGH POWER_PRICE/PERFORM
MOSFET N-CH 600V 23.8A D2PAK
MOSFET N-CH 600V 23.8A D2PAK
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | RS Components, Ltd. | RS Components, Ltd. | Radwell International | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-IPB60R160P6ATMA1 | 874741-IPB60R160P6ATMA1 | 448-IPB60R160P6ATMA1CT-ND | 1300894P | 1300894 | 185666294 | IPB60R160P6ATMA1 | IPB60R160P6ATMA1 | IPB60R160P6ATMA1 |
| Product Name | 600V 23.8A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPB60R160P6ATMA1 | Single FETs, MOSFETs | MOSFETs | MOSFETs | Transistor | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Single FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | ||||
| MOSFET Operating Mode | Enhancement | Enhancement | |||||||
| V(BR)DSS | 600 volts | 600 volts | |||||||
| PD | 176 milliwatts | 176000 milliwatts | |||||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |