MOSFET N-CH 600V 25A TO263-3 Product overview: IPB60R125CPATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 25A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 25A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPB60R125CPATMA1
MOSFET N-CH 600V 25A TO263-3
N-Channel 600V 25A (Tc) 208W (Tc) Surface Mount PG-TO263-3-2
MOSFET N-CH 600V 25A TO263-3
MOSFET N-CH 600V 25A TO263-3
Alternative Parts (Cross-Reference): Cross
Manufacturer: Infineon Technologies
Category: Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Series: CoolMOS™ CP
Package: Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Product Status: Not For New Designs
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
MOSFET N-Ch 600V 25mA D2PAK-2 CoolMOS CP
MOSFET N-CH 600V 25A TO263-3
DISCONTINUED BY MANUFACTURER, POWER FIELD-EFFECT TRANSISTOR, MOSFET, 25A, 600V, 0.125OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-263AB, 3 PIN. FREE 2 YEAR RADWELL WARRANTY
MOSFET, N CHANNEL, 650V, 25A, TO-263; Channel Type:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:25A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | DigiKey | Win Source Electronics | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Radwell International | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-IPB60R125CPATMA1 | IPB60R125CPATMA1 | IPB60R125CPATMA1TR-ND | IPB60R125CPATMA1 | IPB60R125CPATMA1 | 135026170 | 33P7133 | |
| Product Name | 600V 25A MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Transistor | Mosfet, N Channel, 650V, 25A, To-263; Channel Type Infineon |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | |||
| MOSFET Operating Mode | Enhancement | |||||||
| V(BR)DSS | 600 volts | 600 volts | ||||||
| PD | 208 milliwatts | 208000 milliwatts | ||||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
