Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPB60R125CP IPB60R125CP

Description
Manufacturer: Infineon Technologies Win Source Part Number: 017319-IPB60R125CP Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 208W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-TO263-3-2 Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 25A (Tc) Gate-Source Threshold Voltage: 3.5V @ 1.1mA Max Gate Charge: 70nC @ 10V Max Input Capacitance: 2500pF @ 100V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 125 mOhm @ 16A, 10V Popularity: Medium Fake Threat In the Open Market: 69 pct. Supply and Demand Status: Limited
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPB60R125CP - 017319-IPB60R125CP - Win Source Electronics
    Win Source Electronics
  • Transistor - 38346011 - Radwell International
    Radwell International
Request a Quote Datasheet
Description
Manufacturer: Infineon Technologies Win Source Part Number: 017319-IPB60R125CP Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 208W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-TO263-3-2 Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 25A (Tc) Gate-Source Threshold Voltage: 3.5V @ 1.1mA Max Gate Charge: 70nC @ 10V Max Input Capacitance: 2500pF @ 100V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 125 mOhm @ 16A, 10V Popularity: Medium Fake Threat In the Open Market: 69 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPB60R125CP - 017319-IPB60R125CP - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPB60R125CP
017319-IPB60R125CP
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPB60R125CP 017319-IPB60R125CP
Manufacturer: Infineon Technologies Win Source Part Number: 017319-IPB60R125CP Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 208W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-TO263-3-2 Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 25A (Tc) Gate-Source Threshold Voltage: 3.5V @ 1.1mA Max Gate Charge: 70nC @ 10V Max Input Capacitance: 2500pF @ 100V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 125 mOhm @ 16A, 10V Popularity: Medium Fake Threat In the Open Market: 69 pct. Supply and Demand Status: Limited

Manufacturer: Infineon Technologies
Win Source Part Number: 017319-IPB60R125CP
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 208W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-TO263-3-2
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 25A (Tc)
Gate-Source Threshold Voltage: 3.5V @ 1.1mA
Max Gate Charge: 70nC @ 10V
Max Input Capacitance: 2500pF @ 100V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 125 mOhm @ 16A, 10V
Popularity: Medium
Fake Threat In the Open Market: 69 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore, Singapore
600V 25mA MOSFET Transistor
2088-IPB60R125CP
600V 25mA MOSFET Transistor 2088-IPB60R125CP
MOSFETs N-Ch 600V 25mA D2PAK-2 CoolMOS CP Product overview: IPB60R125CP from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 25mA. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 25mA, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-IPB60R125CP can be used for catalog matching and distributor lookup.

MOSFETs N-Ch 600V 25mA D2PAK-2 CoolMOS CP Product overview: IPB60R125CP from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 25mA. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 25mA, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-IPB60R125CP can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
IPB60R125CP
MOSFET IPB60R125CP
MOSFET N-Ch 600V 25mA D2PAK-2 CoolMOS CP

MOSFET N-Ch 600V 25mA D2PAK-2 CoolMOS CP

Buy Now Datasheet
Transistor - 38346011 - Radwell International
Radwell International
Willingboro, NJ, United States
Transistor
38346011
Transistor 38346011
MOSFET, N CH, 650V, 25A, TO-263; TRANSISTOR POLARITY:N CHANNEL; CONTINUOUS DRAIN CURRENT ID:25A; DRAIN SOURCE VOLTAGE VDS:650V; ON RESISTANCE RDS(ON):. FREE 2 YEAR RADWELL WARRANTY

MOSFET, N CH, 650V, 25A, TO-263; TRANSISTOR POLARITY:N CHANNEL; CONTINUOUS DRAIN CURRENT ID:25A; DRAIN SOURCE VOLTAGE VDS:650V; ON RESISTANCE RDS(ON):. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. VAST STOCK CO., LIMITED Radwell International
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 017319-IPB60R125CP 2088-IPB60R125CP IPB60R125CP 38346011
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPB60R125CP 600V 25mA MOSFET Transistor MOSFET Transistor
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 600 volts
PD 208000 milliwatts 208 milliwatts
TJ -55 to 150 C (-67 to 302 F)
Unlock Full Specs
to access all available technical data