Win Source Part Number: 1003061-IPB60R120P7A
Category: Discrete Semiconductor Products>Transistors
Series: CoolMOS™ P7
Package: Tape & Reel
Standard Package: 1,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 8.2A, 10V
Vgs(th) (Max) @ Id: 4V @ 410µA
Power Dissipation (Max): 95W (Tc)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: PG-TO263-3
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1544 pF @ 400 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 56 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Infineon Technologies
Other Names: IPB60R120P7ATMA1-ND,
Base Product Number: IPB60R120
Drive Voltage (Max Rds On, Min Rds On): 10V
N-Channel 650V 26A (Tc) 95W (Tc) Surface Mount PG-TO263-3
N-Channel 650V 26A (Tc) 95W (Tc) Surface Mount PG-TO263-3
N-Channel 650V 26A (Tc) 95W (Tc) Surface Mount PG-TO263-3
MOSFET N-CH 600V 26A D2PAK Product overview: IPB60R120P7ATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 26A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 26A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPB60R120P7ATMA1
MOSFET N-CH 600V 26A D2PAK
MOSFET N-CH 600V 26A D2PAK
MOSFET, N-CH, 600V, 26A, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:26A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.1ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power DissipationRoHS Compliant: Yes
| RS Components, Ltd. | RS Components, Ltd. | Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 2144368 | 2144368P | 1003061-IPB60R120P7ATMA1 | IPB60R120P7ATMA1DKR-ND | 278-IPB60R120P7ATMA1 | IPB60R120P7ATMA1 | IPB60R120P7ATMA1 | IPB60R120P7ATMA1 | 49AC7996 |
| Product Name | MOSFETs | MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | 600V 26A MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Single FETs, MOSFETs | MOSFET | Mosfet, N-Ch, 600V, 26A, To-263; Transistor Polarity Infineon |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | ||||
| Package Type | TO-263; D2pak (to-263) | TO-263; TO-263 | SOT3 | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-3; TO-263; TO-252 (DPAK) | |
| Number of units in IC | 1 | ||||||||
| PD | 95000 milliwatts | 95 milliwatts | 95000 milliwatts | ||||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
