MOSFET N-CH 600V 31A TO263-3 Product overview: IPB60R099CPATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 31A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 31A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPB60R099CPATMA1
N-Channel 600V 31A (Tc) 255W (Tc) Surface Mount PG-TO263-3-2
N-Channel 600V 31A (Tc) 255W (Tc) Surface Mount PG-TO263-3-2
N-Channel 600V 31A (Tc) 255W (Tc) Surface Mount PG-TO263-3-2
Manufacturer: Infineon Technologies
Win Source Part Number: 1325351-IPB60R099CPA
Category: Discrete Semiconductor Products>Transistors
Packaging: Reel - TR
Standard Package: 1,000
Mounting: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 18A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Power Dissipation (Max): 255W (Tc)
Supplier Device Package: PG-TO263-3-2
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 100 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Case / Package: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
ECCN: EAR99
Fake Threat In the Open Market: 85
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: IPB60R099CP-ND,IPB60
Base Product Number: IPB60R099
Product Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
RoHS Status: ROHS3 Compliant
MOSFET N-CH 600V 31A TO263-3
MOSFET N-Ch 650V 31A D2PAK-2 CoolMOS CP
N CHANNEL MOSFET, 650V, 31A, TO-263; Channel Type:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:31A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-IPB60R099CPATMA1 | IPB60R099CPATMA1CT-ND | 1325351-IPB60R099CPATMA1 | IPB60R099CPATMA1 | IPB60R099CPATMA1 | 33P7131 |
| Product Name | 600V 31A MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | N Channel Mosfet, 650V, 31A, To-263; Channel Type Infineon |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel | ||
| MOSFET Operating Mode | Enhancement | |||||
| V(BR)DSS | 650 volts | |||||
| PD | 255 milliwatts | 255000 milliwatts |
