MOSFET N-CH 600V 31A TO263-3 Product overview: IPB60R099CPAATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 31A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 31A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPB60R099CPAATMA
Win Source Part Number: 1065221-IPB60R099CPA
Category: Discrete Semiconductor Products>Transistors
Series: CoolMOS™
Package: Tape & Reel
Standard Package: 1,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 18A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Power Dissipation (Max): 255W (Tc)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: PG-TO263-3-2
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 100 V
Vgs (Max): ±20V
Temperature Range - Operating: -40°C ~ 150°C (TJ)
Alternative Parts (Cross-Reference): SIHB33N60E-GE3; SIHB33N60EF-GE3; IPB65R099C6ATMA1; STB40N60M2; SIHB28N60EF-GE3; STB42N60M2-EPIPB60R0
ECCN: EAR99
Fake Threat In the Open Market: 81 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Infineon Technologies
Other Names: 448-IPB60R099CPAATMA
Base Product Number: IPB60R099
Drive Voltage (Max Rds On, Min Rds On): 10V
N-Channel 600V 31A (Tc) 255W (Tc) Surface Mount PG-TO263-3-2
N-Channel 600V 31A (Tc) 255W (Tc) Surface Mount PG-TO263-3-2
N-Channel 600V 31A (Tc) 255W (Tc) Surface Mount PG-TO263-3-2
MOSFET N-CH 600V 31A TO263-3
MOSFET N-Ch 600V 31A D2PAK-2 CoolMOS CPA
MOSFET N-CH 600V 31A TO263-3
MOSFET N-CH 600V 31A TO263-3
MOSFET, AEC-Q101, N-CH, 600V, 31A, 255W ROHS COMPLIANT: YES
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | RS Components, Ltd. | DigiKey | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Utmel Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-IPB60R099CPAATMA1 | 1065221-IPB60R099CPAATMA1 | 2732774 | 448-IPB60R099CPAATMA1TR-ND | IPB60R099CPAATMA1 | IPB60R099CPAATMA1 | 376-IPB60R099CPAATMA1 | IPB60R099CPAATMA1 | 39AH8898 |
| Product Name | 600V 31A MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | MOSFETs | Single FETs, MOSFETs | Single FETs, MOSFETs | MOSFET | MOSFET N-CH 600V 31A TO263-3 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, Aec-Q101, N-Ch, 600V, 31A, 255W Rohs Compliant Infineon |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | |||||
| MOSFET Operating Mode | Enhancement | Enhancement; ENHANCEMENT MODE | |||||||
| V(BR)DSS | 600 volts | 600 volts | |||||||
| PD | 255 milliwatts | 255000 milliwatts | 255000 milliwatts | 255000 milliwatts | |||||
| TJ | -40 to 150 C (-40 to 302 F) | -40 to 150 C (-40 to 302 F) | -40 to 150 C (-40 to 302 F) | -40 to 150 C (-40 to 302 F) |