Infineon Technologies AG Automotive MOSFET IPB60R099CPA

Description
Summary of Features Worldwide best RDS(on) in TO-220 package Ultra low gate charge Extreme dv/dt rated High peak current capability Automotive AEC Q101 qualified Green package (RoHS compliant) Potential Applications CoolMOS™ CPA is specially designed for DC-DC converters for automotive applications Applications EV traction inverter
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Description
Summary of Features Worldwide best RDS(on) in TO-220 package Ultra low gate charge Extreme dv/dt rated High peak current capability Automotive AEC Q101 qualified Green package (RoHS compliant) Potential Applications CoolMOS™ CPA is specially designed for DC-DC converters for automotive applications Applications EV traction inverter
Request a Quote Datasheet

Suppliers

Company
Product
Description
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Automotive MOSFET - IPB60R099CPA - Infineon Technologies AG
Neubiberg, Germany
Automotive MOSFET
IPB60R099CPA
Automotive MOSFET IPB60R099CPA
Summary of Features Worldwide best RDS(on) in TO-220 package Ultra low gate charge Extreme dv/dt rated High peak current capability Automotive AEC Q101 qualified Green package (RoHS compliant) Potential Applications CoolMOS™ CPA is specially designed for DC-DC converters for automotive applications Applications EV traction inverter

Summary of Features

  • Worldwide best RDS(on) in TO-220 package
  • Ultra low gate charge
  • Extreme dv/dt rated
  • High peak current capability
  • Automotive AEC Q101 qualified
  • Green package (RoHS compliant)

Potential Applications

CoolMOS™ CPA is specially designed for DC-DC converters for automotive applications


Applications

  • EV traction inverter
Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET N-Ch 600V 31A D2PAK-2 CoolMOS CPA

MOSFET N-Ch 600V 31A D2PAK-2 CoolMOS CPA

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Technical Specifications

  Infineon Technologies AG VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number IPB60R099CPA IPB60R099CPA
Product Name Automotive MOSFET MOSFET
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
VGS(off) 2.5 to 3.5 volts
rDS(on) 0.1050 ohms
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