N-Channel 600V 37.9A (Tc) 278W (Tc) Surface Mount PG-TO263-3
N-Channel 600V 37.9A (Tc) 278W (Tc) Surface Mount PG-TO263-3
N-Channel 600V 37.9A (Tc) 278W (Tc) Surface Mount PG-TO263-3
MOSFET N-CH 600V 37.9A D2PAK
MOSFET N-CH 600V 37.9A D2PAK
MOSFET Transistor, N Channel, 37.9 A, 650 V, 0.09 ohm, 10 V, 3 V RoHS Compliant: Yes
| DigiKey | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IPB60R099C6ATMA1CT-ND | IPB60R099C6ATMA1 | IPB60R099C6ATMA1 | 85X6022 |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet Transistor, N Channel, 37.9 A, 650 V, 0.09 Ohm, 10 V, 3 V Rohs Compliant Infineon |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | |
| Package Type | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-3 |
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||
| V(BR)DSS | 600 volts |
