Win Source Part Number: 964219-IPB60R040C7AT
Category: Discrete Semiconductor Products>Transistors
Series: CoolMOS™ C7
Package: Tape & Reel
Standard Package: 1,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 24.9A, 10V
Vgs(th) (Max) @ Id: 4V @ 1.24mA
Power Dissipation (Max): 227W (Tc)
Package / Case: TO-263-4, D²Pak (3 Leads + Tab), TO-263AA
Supplier Device Package: PG-TO263-3
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 400 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Alternative Parts (Cross-Reference): IPB60R040C7ATMA1IPB6
ECCN: EAR99
Fake Threat In the Open Market: 61 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Infineon Technologies
Other Names: IPB60R040C7ATMA1CT,I
Base Product Number: IPB60R040
Drive Voltage (Max Rds On, Min Rds On): 10V
MOSFET N-CH 600V 50A TO263-3 Product overview: IPB60R040C7ATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 50A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 50A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPB60R040C7ATMA1
N-Channel 650V 50A (Tc) 227W (Tc) Surface Mount PG-TO263-3
N-Channel 650V 50A (Tc) 227W (Tc) Surface Mount PG-TO263-3
N-Channel 650V 50A (Tc) 227W (Tc) Surface Mount PG-TO263-3
MOSFET, N-CH, 600V, 50A, 150DEG C, 227W; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:50A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.5V RoHS Compliant: Yes
MOSFET N-CH 600V 50A TO263-3
MOSFET N-CH 600V 50A TO263-3
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | RS Components, Ltd. | Newark, An Avnet Company | VAST STOCK CO., LIMITED | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 964219-IPB60R040C7ATMA1 | 278-IPB60R040C7ATMA1 | IPB60R040C7ATMA1DKR-ND | 2224651 | 93AC7103 | IPB60R040C7ATMA1 | IPB60R040C7ATMA1 | IPB60R040C7ATMA1 |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | 600V 50A MOSFET Transistor | Single FETs, MOSFETs | MOSFETs | Mosfet, N-Ch, 600V, 50A, 150Deg C, 227W; Channel Type Infineon | MOSFET | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | ||||
| PD | 227000 milliwatts | 227 milliwatts | 227000 milliwatts | |||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||||
| Package Type | SOT3 | Tape & Reel (TR) | TO-263; TO-263-4, D2PAK (3 Leads + Tab), TO-263AA | TO-263; TO-263 | TO-3 | TO-263; TO-263-4, D²Pak (3 Leads + Tab), TO-263AA | TO-263; TO-263-4, D2PAK (3 Leads + Tab), TO-263AA | |
| MOSFET Operating Mode | Enhancement |
