N-Channel 250V 25A (Tc) 136W (Tc) Surface Mount PG-TO263-3
N-Channel 250V 25A (Tc) 136W (Tc) Surface Mount PG-TO263-3
N-Channel 250V 25A (Tc) 136W (Tc) Surface Mount PG-TO263-3
MOSFET N-CH 250V 25A D2PAK
MOSFET N-CH 250V 25A D2PAK Product overview: IPB600N25N3GATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 250V, 25A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 250V, 25A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPB600N25N3GATMA
Win Source Part Number: 1024620-IPB600N25N3G
Category: Discrete Semiconductor Products>Transistors
Series: OptiMOS™
Package: Tape & Reel
Standard Package: 1,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 250 V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 25A, 10V
Vgs(th) (Max) @ Id: 4V @ 90µA
Power Dissipation (Max): 136W (Tc)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: PG-TO263-3
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 100 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 78 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Infineon Technologies
Other Names: IPB600N25N3GATMA1CT,
Base Product Number: IPB600
Drive Voltage (Max Rds On, Min Rds On): 10V
MOSFET N-CH 250V 25A D2PAK
250V 25A 60mΩ@25A,10V 136W 4V@90uA null TO-263-3 MOSFETs ROHS
MOSFET N-Ch 250V 25A D2PAK-2 OptiMOS 3
MOSFET Transistor, N Channel, 25 A, 250 V, 0.051 ohm, 10 V, 3 V RoHS Compliant: Yes
| DigiKey | ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | LCSC Electronics Technology (HK) Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IPB600N25N3GATMA1CT-ND | IPB600N25N3GATMA1 | 278-IPB600N25N3GATMA1 | 1024620-IPB600N25N3GATMA1 | IPB600N25N3GATMA1 | IPB600N25N3GATMA1 | IPB600N25N3GATMA1 | 85X6023 |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | 250V 25A MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Triode/MOS Tube/Transistor >> MOSFETs | MOSFET | Mosfet Transistor, N Channel, 25 A, 250 V, 0.051 Ohm, 10 V, 3 V Rohs Compliant Infineon |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | |||
| Package Type | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | SOT3 | 2350 pF @ 100 V | TO-263 | TO-3 | |
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||||
| V(BR)DSS | 250 volts | 250 volts | 250 volts | |||||
| IDSS | 25000 milliamps |
