Infineon Technologies AG Single FETs, MOSFETs IPB50R299CPATMA1

N-Channel 550V 12A (Tc) 104W (Tc) Surface Mount PG-TO263-3-2

Manufacturer: Infineon Technologies
Win Source Part Number: 1045802-IPB50R299CPATMA1
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 104W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-TO263-3-2
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 550V
Continuous Drain Current at 25°C: 12A (Tc)
Gate-Source Threshold Voltage: 3.5V @ 440μA
Max Gate Charge: 31nC @ 10V
Max Input Capacitance: 1190pF @ 100V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 299 mOhm @ 6.6A, 10V
Popularity: Medium
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Sufficient

MOSFET N-CH 550V 12A TO263-3 Product overview: IPB50R299CPATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 550V, 12A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 550V, 12A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPB50R299CPATMA1 can be used for catalog matching and distributor lookup.