Manufacturer: Infineon Technologies
Win Source Part Number: 1045802-IPB50R299CPA
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 104W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-TO263-3-2
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 550V
Continuous Drain Current at 25°C: 12A (Tc)
Gate-Source Threshold Voltage: 3.5V @ 440μA
Max Gate Charge: 31nC @ 10V
Max Input Capacitance: 1190pF @ 100V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 299 mOhm @ 6.6A, 10V
Popularity: Medium
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Sufficient
N-Channel 550V 12A (Tc) 104W (Tc) Surface Mount PG-TO263-3-2
MOSFET N-CH 550V 12A TO263-3
| Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors |
| Product Number | 1045802-IPB50R299CPATMA1 | IPB50R299CPATMA1TR-ND | IPB50R299CPATMA1 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPB50R299CPATMA1 | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | |
| V(BR)DSS | 550 volts | ||
| PD | 104000 milliwatts |
