N-Channel 550V 23A (Tc) 192W (Tc) Surface Mount PG-TO263-3-2
N-Channel 550V 23A (Tc) 192W (Tc) Surface Mount PG-TO263-3-2
N-Channel 550V 23A (Tc) 192W (Tc) Surface Mount PG-TO263-3-2
MOSFET N-CH 550V 23A TO263-3 Product overview: IPB50R140CPATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 550V, 23A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 550V, 23A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPB50R140CPATMA1
Manufacturer: Infineon Technologies
Win Source Part Number: 874739-IPB50R140CPAT
Series: CoolMOS™
Operating Temperature Range: -55°C ~ 150°C (TJ)
Features: N-Channel 550 V 23A (Tc) 192W (Tc) Surface Mount PG-TO263-3-2
Package: Reel - TR
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting: Surface Mount
Part Status: Not For New Designs
Family Name: IPB50R140
Categories: Discrete Semiconductor Products
Case / Package: PG-TO263-3-2
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 77 pct.
Supply and Demand Status: Limited
Quantity per package: 1000
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: IPB50R140CPATMA1CT, IPB50R140CPCT-ND, IPB50R140CP-ND, IPB50R140CPATMA1TR, IPB50R140CPTR-ND, SP000212746, IPB50R140CPATMA1DKR,
MOSFET N-CH 550V 23A TO263-3
MOSFET N-Ch 550V 23A D2PAK-2 CoolMOS CP
MOSFET Transistor, N Channel, 23 A, 550 V, 0.13 ohm, 10 V, 3 V RoHS Compliant: Yes
MOSFET N-CH 550V 23A TO263-3
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IPB50R140CPATMA1TR-ND | 278-IPB50R140CPATMA1 | 874739-IPB50R140CPATMA1 | IPB50R140CPATMA1 | IPB50R140CPATMA1 | 85X6021 | IPB50R140CPATMA1 |
| Product Name | Single FETs, MOSFETs | 550V 23A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPB50R140CPATMA1 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet Transistor, N Channel, 23 A, 550 V, 0.13 Ohm, 10 V, 3 V Rohs Compliant Infineon | Single FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | ||
| Package Type | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | TO-263; SOT3; PG-TO263-3-2 | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-3 | TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| MOSFET Operating Mode | Enhancement | ||||||
| V(BR)DSS | 550 volts | 550 volts | |||||
| PD | 192 milliwatts | 192000 milliwatts |
