Infineon Technologies AG N-Channel MOSFET Transistor IPB47N10S-33

SIPMOS Power-Transistor Feature N-Channel Enhancement mode Product overview: IPB47N10S-33 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-IPB47N10S-33 can be used for catalog matching and distributor lookup.

Manufacturer: Infineon Technologies
Win Source Part Number: 1186046-IPB47N10S-33
Series: SIPMOS
Operating Temperature Range: -55°C ~ 175°C (TJ)
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Family Name: IPB47N10S-33
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Homepage: www.infineon.com
Manufacturer Package: PG-TO263-3-2
Channel Type Type: N
Drain Source Voltage: 100V
Vgs(th) (Maximum) @ Id: 4V @ 2mA
Gate Charge (Qg) (Maximum) @ Vgs: 105nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 2500pF @ 25V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 175W (Tc)
Rds On (Maximum) @ Id, Vgs: 33 mOhm @ 33A, 10V
Alternative Parts (Cross-Reference): RSJ550N10FRATL; BUK7631-100E; BUK9660-100A;
Introduction Date: August 24, 2001
ECCN: EAR99
Country of Origin: Malaysia
Estimated EOL Date: 2019
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Balance