TRENCH >=100V PG-TO263-3 Product overview: IPB320P10LMATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPB320P10LMATMA1
P-Channel 100V 6.5A (Ta), 63A (Tc) 3.8W (Ta), 300W (Tc) Surface Mount PG-TO263-3
P-Channel 100V 6.5A (Ta), 63A (Tc) 3.8W (Ta), 300W (Tc) Surface Mount PG-TO263-3
P-Channel 100V 6.5A (Ta), 63A (Tc) 3.8W (Ta), 300W (Tc) Surface Mount PG-TO263-3
TRENCH >=100V PG-TO263-3
TRENCH >=100V PG-TO263-3
MOSFET, P-CH, 100V, TO-263-3 ROHS COMPLIANT: YES
| RS Components, Ltd. | ERSAELECTRONICS PTE. LTD. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 2354846 | 278-IPB320P10LMATMA1 | 448-IPB320P10LMATMA1TR-ND | IPB320P10LMATMA1 | IPB320P10LMATMA1 | 90AJ6108 |
| Product Name | MOSFETs | 100V MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Single FETs, MOSFETs | Mosfet, P-Ch, 100V, To-263-3 Rohs Compliant Infineon |
| Package Type | TO-263; TO-263 | Tape & Reel (TR) | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-3; TO-263 |
| Polarity | P-Channel | P-Channel | P-Channel; P-Channel | |||
| MOSFET Operating Mode | Enhancement | |||||
| V(BR)DSS | 100 volts | 100 volts | ||||
| PD | 300 milliwatts | 3800 milliwatts |
