N-Channel 200V 34A (Tc) 136W (Tc) Surface Mount PG-TO263-3
N-Channel 200V 34A (Tc) 136W (Tc) Surface Mount PG-TO263-3
N-Channel 200V 34A (Tc) 136W (Tc) Surface Mount PG-TO263-3
MOSFET N-CH 200V 34A D2PAK Product overview: IPB320N20N3GATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V, 34A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 34A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPB320N20N3GATMA
Manufacturer: Infineon Technologies
Win Source Part Number: 874735-IPB320N20N3GA
Series: OptiMOS™
Operating Temperature Range: -55°C ~ 175°C (TJ)
Features: N-Channel 200 V 34A (Tc) 136W (Tc) Surface Mount PG-TO263-3
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Package: Reel - TR
Mounting: Surface Mount
Family Name: IPB320
Categories: Discrete Semiconductor Products
Case / Package: PG-TO263-3
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 47 pct.
Supply and Demand Status: Limited
Quantity per package: 1000
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 46 Weeks
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: SP000691172, IPB320N20N3G, IPB320N20N3 GDKR, IPB320N20N3 GCT, IPB320N20N3GATMA1TR,
MOSFET, N CHANNEL, 200V, 34A, TO263-3; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:34A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
Trans MOSFET N-CH 200V 34A 3-Pin(2+Tab) TO-263
MOSFET N-CH 200V 34A D2PAK
MOSFET N-Ch 200V 34A D2PAK-2 OptiMOS 3
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Newark, An Avnet Company | Utmel Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IPB320N20N3GATMA1TR-ND | 278-IPB320N20N3GATMA1 | 874735-IPB320N20N3GATMA1 | 47W3467 | 376-IPB320N20N3GATMA1 | IPB320N20N3GATMA1 | IPB320N20N3GATMA1 |
| Product Name | Single FETs, MOSFETs | 200V 34A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPB320N20N3GATMA1 | Mosfet, N Channel, 200V, 34A, To263-3; Channel Type Infineon | Trans MOSFET N-CH 200V 34A 3-Pin(2+Tab) TO-263 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel | |||
| Package Type | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | SOT3; PG-TO263-3 | TO-3 | 2350 pF @ 100 V | ||
| MOSFET Operating Mode | Enhancement | Enhancement; ENHANCEMENT MODE | |||||
| V(BR)DSS | 200 volts | 200 volts | |||||
| Transconductance | 0.0270 kS |
