Manufacturer: Infineon Technologies
Win Source Part Number: 921261-IPB200N25N3GA
Series: OptiMOS™
Operating Temperature Range: -55°C ~ 175°C (TJ)
Features: N-Channel 250 V 64A (Tc) 300W (Tc) Surface Mount PG-TO263-3
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Package: Reel - TR
Mounting: Surface Mount
Family Name: IPB200
Categories: Discrete Semiconductor Products
Case / Package: PG-TO263-3
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 83 pct.
Supply and Demand Status: Balance
Quantity per package: 1000
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 46 Weeks
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: IPB200N25N3GATMA1TR,
N-Channel 250V 64A (Tc) 300W (Tc) Surface Mount PG-TO263-3
N-Channel 250V 64A (Tc) 300W (Tc) Surface Mount PG-TO263-3
N-Channel 250V 64A (Tc) 300W (Tc) Surface Mount PG-TO263-3
MOSFET N-CH 250V 64A D2PAK Product overview: IPB200N25N3GATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 250V, 64A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 250V, 64A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPB200N25N3GATMA
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MOSFET N-CH 250V 64A D2PAK
MOSFET N-CH 250V 64A D2PAK
250V 64A 20mΩ@64A,10V 300W 4V@270uA N Channel TO-263-3 MOSFETs ROHS
(PRICE/TC) MOSFET, N-CH, 250V, 64A, TO-263- 3; TRANSISTOR POLARITY:N CHANNEL; DRAIN SOURCE VOLTAGE VDS:250V; CONTINUOUS DRAIN CURRENT ID:64A; ON RESISTANCE RDS(ON):0.0175OHM; TRANSISTOR MOUNTING:SURFACE MOUNT; RDS(ON) TEST VOLTAGE VGS:10V ROHS COMPLIANT:. FREE 2 YEAR RADWELL WARRANTY
MOSFET, N-CH, 250V, 64A, TO-263- 3; Channel Type:N Channel; Drain Source Voltage Vds:250V; Continuous Drain Current Id:64A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
| Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | LCSC Electronics Technology (HK) Limited | Radwell International | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 921261-IPB200N25N3GATMA1 | IPB200N25N3GATMA1TR-ND | 278-IPB200N25N3GATMA1 | IPB200N25N3GATMA1 | IPB200N25N3GATMA1 | IPB200N25N3GATMA1 | IPB200N25N3GATMA1 | 108062621 | 79X1433 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPB200N25N3GATMA1 | Single FETs, MOSFETs | 250V 64A MOSFET Transistor | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Single FETs, MOSFETs | Triode/MOS Tube/Transistor >> MOSFETs | Transistor | Mosfet, N-Ch, 250V, 64A, To-2633; Channel Type Infineon |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | ||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | |||||
| Package Type | SOT3; PG-TO263-3 | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 | TO-3; TO-263 | ||
| MOSFET Operating Mode | Enhancement | ||||||||
| V(BR)DSS | 250 volts | 250 volts | 250 volts |
