MOSFET N-CH 150V 50A D2PAK Product overview: IPB200N15N3GATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 150V, 50A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 150V, 50A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPB200N15N3GATMA
N-Channel 150V 50A (Tc) 150W (Tc) Surface Mount PG-TO263-3
N-Channel 150V 50A (Tc) 150W (Tc) Surface Mount PG-TO263-3
Manufacturer: Infineon Technologies
Win Source Part Number: 874733-IPB200N15N3GA
Series: OptiMOS™
Operating Temperature Range: -55°C ~ 175°C (TJ)
Features: N-Channel 150 V 50A (Tc) 150W (Tc) Surface Mount PG-TO263-3
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Package: Reel - TR
Mounting: Surface Mount
Family Name: IPB200
Categories: Discrete Semiconductor Products
Case / Package: PG-TO263-3
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Limited
Quantity per package: 1000
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 46 Weeks
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: IPB200N15N3GATMA1CT,
MOSFET N-CH 150V 50A D2PAK
MOSFET N-CH 150V 50A D2PAK
MOSFET, N CH, 150V, 50A, TO-263; Channel Type:N Channel; Drain Source Voltage Vds:150V; Continuous Drain Current Id:50A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-IPB200N15N3GATMA1 | IPB200N15N3GATMA1TR-ND | 874733-IPB200N15N3GATMA1 | IPB200N15N3GATMA1 | IPB200N15N3GATMA1 | 60R2679 |
| Product Name | 150V 50A MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPB200N15N3GATMA1 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Single FETs, MOSFETs | Mosfet, N Ch, 150V, 50A, To-263; Channel Type Infineon |
| MOSFET Operating Mode | Enhancement | |||||
| V(BR)DSS | 150 volts | 150 volts | ||||
| PD | 150000 milliwatts | 150000 milliwatts | ||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | |||
| Package Type | Tape & Reel (TR) | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | SOT3; PG-TO263-3 | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-3; TO-263 |
