MOSFET N-CH 250V 17A TO263-3 Product overview: IPB17N25S3100ATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 250V, 17A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 250V, 17A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPB17N25S3100ATM
N-Channel 250V 17A (Tc) 107W (Tc) Surface Mount PG-TO263-3-2
N-Channel 250V 17A (Tc) 107W (Tc) Surface Mount PG-TO263-3-2
N-Channel 250V 17A (Tc) 107W (Tc) Surface Mount PG-TO263-3-2
Manufacturer: Infineon Technologies
Win Source Part Number: 874731-IPB17N25S3100
Series: Automotive, AEC-Q101, OptiMOS™
Operating Temperature Range: -55°C ~ 175°C (TJ)
Features: N-Channel 250 V 17A (Tc) 107W (Tc) Surface Mount PG-TO263-3-2
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Package: Reel - TR
Mounting: Surface Mount
Family Name: IPB17N25
Categories: Discrete Semiconductor Products
Case / Package: PG-TO263-3-2
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 74 pct.
Supply and Demand Status: Limited
Quantity per package: 1000
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 51 Weeks
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: 448-IPB17N25S3100ATM
MOSFET, N-CH, AEC-Q100, 250V, 17A, TO263; Transistor Polarity:N Channel; Continuous Drain Current Id:17A; Drain Source Voltage Vds:250V; On Resistance Rds(on):0.085ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power RoHS Compliant: Yes
MOSFET N-CH 250V 17A TO263-3
MOSFET N-Ch 250V 17A D2PAK-2
MOSFET N-CH 250V 17A TO263-3
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Newark, An Avnet Company | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-IPB17N25S3100ATMA1 | 448-IPB17N25S3100ATMA1DKR-ND | 874731-IPB17N25S3100ATMA1 | 49AC0282 | IPB17N25S3100ATMA1 | IPB17N25S3100ATMA1 | IPB17N25S3100ATMA1 |
| Product Name | 250V 17A MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPB17N25S3100ATMA1 | Mosfet, N-Ch, Aec-Q100, 250V, 17A, To263; Transistor Polarity Infineon | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | |||
| MOSFET Operating Mode | Enhancement | ||||||
| V(BR)DSS | 250 volts | 250 volts | |||||
| PD | 107 milliwatts | 107000 milliwatts | |||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) |
