Infineon Technologies AG Single FETs, MOSFETs IPB12CN10N G

Description
N-Channel 100V 67A (Tc) 125W (Tc) Surface Mount PG-TO263-3
Request a Quote Datasheet
Description
N-Channel 100V 67A (Tc) 125W (Tc) Surface Mount PG-TO263-3
Request a Quote Datasheet

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Single FETs, MOSFETs - IPB12CN10NG-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IPB12CN10NG-ND
Single FETs, MOSFETs IPB12CN10NG-ND
N-Channel 100V 67A (Tc) 125W (Tc) Surface Mount PG-TO263-3

N-Channel 100V 67A (Tc) 125W (Tc) Surface Mount PG-TO263-3

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPB12CN10N G - 776847-IPB12CN10N G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPB12CN10N G
776847-IPB12CN10N G
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPB12CN10N G 776847-IPB12CN10N G
Manufacturer: Infineon Technologies Win Source Part Number: 776847-IPB12CN10N G Series: OptiMOS Packaging: Reel package Operating Temperature Range: -55°C ~ 175°C (TJ) Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Mounting: SMD Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 67A (Tc) Part Status: Obsolete(EOL) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Package: PG-TO263-3 Channel Type Type: N Drain Source Voltage: 100V Vgs(th) (Maximum) @ Id: 4V @ 83μA Gate Charge (Qg) (Maximum) @ Vgs: 65nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 4320pF @ 50V Vgs (Maximum): ±20V Power Dissipation (Maximum): 125W (Tc) Rds On (Maximum) @ Id, Vgs: 12.6 mOhm @ 67A, 10V Popularity: Medium Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Limited

Manufacturer: Infineon Technologies
Win Source Part Number: 776847-IPB12CN10N G
Series: OptiMOS
Packaging: Reel package
Operating Temperature Range: -55°C ~ 175°C (TJ)
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
Part Status: Obsolete(EOL)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Package: PG-TO263-3
Channel Type Type: N
Drain Source Voltage: 100V
Vgs(th) (Maximum) @ Id: 4V @ 83μA
Gate Charge (Qg) (Maximum) @ Vgs: 65nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 4320pF @ 50V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 125W (Tc)
Rds On (Maximum) @ Id, Vgs: 12.6 mOhm @ 67A, 10V
Popularity: Medium
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Limited

Buy Now Datasheet

Technical Specifications

  DigiKey Win Source Electronics
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IPB12CN10NG-ND 776847-IPB12CN10N G
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPB12CN10N G
Polarity N-Channel
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