Infineon Technologies AG Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single IPB11N03LA

Description
Win Source Part Number: 1020207-IPB11N03LA Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: OptiMOS™ Package: Tape & Reel (TR) Standard Package: 1,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 25 V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 11.2mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 2V @ 20µA Power Dissipation (Max): 52W (Tc) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: PG-TO263-3-2 Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1358 pF @ 15 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 175°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 58 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Infineon Technologies Other Names: IPB11N03LAT,SP000014 987 Base Product Number: IPB11N Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V RoHS Status: RoHS non-compliant
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Description
Win Source Part Number: 1020207-IPB11N03LA Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: OptiMOS™ Package: Tape & Reel (TR) Standard Package: 1,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 25 V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 11.2mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 2V @ 20µA Power Dissipation (Max): 52W (Tc) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: PG-TO263-3-2 Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1358 pF @ 15 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 175°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 58 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Infineon Technologies Other Names: IPB11N03LAT,SP000014 987 Base Product Number: IPB11N Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V RoHS Status: RoHS non-compliant
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Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1020207-IPB11N03LA - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1020207-IPB11N03LA
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1020207-IPB11N03LA
Win Source Part Number: 1020207-IPB11N03LA Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: OptiMOS™ Package: Tape & Reel (TR) Standard Package: 1,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 25 V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 11.2mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 2V @ 20µA Power Dissipation (Max): 52W (Tc) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: PG-TO263-3-2 Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1358 pF @ 15 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 175°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 58 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Infineon Technologies Other Names: IPB11N03LAT,SP000014 987 Base Product Number: IPB11N Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V RoHS Status: RoHS non-compliant

Win Source Part Number: 1020207-IPB11N03LA
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: OptiMOS™
Package: Tape & Reel (TR)
Standard Package: 1,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 25 V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 11.2mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 2V @ 20µA
Power Dissipation (Max): 52W (Tc)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: PG-TO263-3-2
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1358 pF @ 15 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 58 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Infineon Technologies
Other Names: IPB11N03LAT,SP000014987
Base Product Number: IPB11N
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
RoHS Status: RoHS non-compliant

Buy Now Datasheet
Singapore, Singapore
25V 30A MOSFET Transistor
278-IPB11N03LA
25V 30A MOSFET Transistor 278-IPB11N03LA
MOSFET N-CH 25V 30A TO263-3 Product overview: IPB11N03LA from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 25V, 30A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 25V, 30A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPB11N03LA can be used for catalog matching and distributor lookup.

MOSFET N-CH 25V 30A TO263-3 Product overview: IPB11N03LA from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 25V, 30A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 25V, 30A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPB11N03LA can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - IPB11N03LA-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IPB11N03LA-ND
Single FETs, MOSFETs IPB11N03LA-ND
N-Channel 25V 30A (Tc) 52W (Tc) Surface Mount PG-TO263-3-2

N-Channel 25V 30A (Tc) 52W (Tc) Surface Mount PG-TO263-3-2

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IPB11N03LA - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IPB11N03LA
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IPB11N03LA
MOSFET N-CH 25V 30A TO263-3

MOSFET N-CH 25V 30A TO263-3

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number 1020207-IPB11N03LA 278-IPB11N03LA IPB11N03LA-ND IPB11N03LA
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 25V 30A MOSFET Transistor Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel
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