Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPB08CNE8N G IPB08CNE8N G

Manufacturer: Infineon Technologies
Win Source Part Number: 1045768-IPB08CNE8N G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 167W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: PG-TO263-2
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 85V
Continuous Drain Current at 25°C: 95A (Tc)
Gate-Source Threshold Voltage: 4V @ 130μA
Max Gate Charge: 99nC @ 10V
Max Input Capacitance: 6690pF @ 40V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 8.2 mOhm @ 95A, 10V
Popularity: Medium
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Sufficient

MOSFET N-CH 85V 95A D2PAK Product overview: IPB08CNE8N G from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 85V, 95A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 85V, 95A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPB08CNE8N G can be used for catalog matching and distributor lookup.

N-Channel 85V 95A (Tc) 167W (Tc) Surface Mount PG-TO263-3