Infineon Technologies AG Transistors IPA80R1K0CE

Description
800V 5.7A 950mΩ@10V,3.6A 32W 3.9V@250uA 1 N-Channel TO-220F-3 MOSFETs ROHS
  • Transistors - IPA80R1K0CE - ODG (Origin Data Global)
    ODG (Origin Data Global)
Request a Quote
Description
800V 5.7A 950mΩ@10V,3.6A 32W 3.9V@250uA 1 N-Channel TO-220F-3 MOSFETs ROHS
Request a Quote

Suppliers

Company
Product
Description
Supplier Links
Transistors - IPA80R1K0CE - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
IPA80R1K0CE
Transistors IPA80R1K0CE
800V 5.7A 950mΩ@10V,3.6A 32W 3.9V@250uA 1 N-Channel TO-220F-3 MOSFETs ROHS

800V 5.7A 950mΩ@10V,3.6A 32W 3.9V@250uA 1 N-Channel TO-220F-3 MOSFETs ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number IPA80R1K0CE
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

DC - 6 GHz, 10 Watt, 28 V GaN RF Power Transistor - T2G6000528-Q3 - Qorvo
Qorvo
DC - 6 GHz, 10 Watt, 28 V GaN RF Power Transistor
T2G6000528-Q3
Specs
Transistor Technology / Material DC - 6 GHz, 10 Watt, 28 V GaN RF Power Transistor
Package Type NI-200
Transistor Grade / Operating Range Military
View Details
4 suppliers
4-CHANNEL SUPERCAPACITOR AUTO BALANCING PCB - SABMB16 - Advanced Linear Devices, Inc.
Advanced Linear Devices, Inc.
4-CHANNEL SUPERCAPACITOR AUTO BALANCING PCB
SABMB16
Specs
Transistor Type MOSFET
View Details
Fuji Electric Corp. of America
Bipolar Transistor
2SK3512-01S-TE24R
Specs
Transistor Type Bipolar RF
View Details
TRANSISTORS - Transistors (BJT) - Single - 2N3904TAR - 906251-2N3904TAR - Win Source Electronics
Rochester Electronics
TRANSISTORS - Transistors (BJT) - Single - 2N3904TAR
2N3904TAR
Specs
Transistor Type Bipolar RF
Polarity NPN
Package Type TO-92; SOT3; TO-92-3
View Details