The IGT65R055D2 is a 650 V enhancement-mode gallium nitride power transistor designed for high-efficiency power conversion in applications such as PFC, LLC, SMPS, and chargers. It is packaged in a PG-HSOF-8 case and features a maximum drain-source voltage of 650 V continuous and 900 V transient, a drain-source on-state resistance of 66 mΩ, and a pulsed drain current of 60 A. It exhibits zero reverse recovery charge, low gate and output charge, and supports reverse conduction. The device is JEDEC qualified for industrial applications and includes 2 kV HBM ESD protection.
The IGT65R055D2 GaN power transistor allows for increased efficiency at high-frequency operation. As part of the CoolGaN™ 650 V G5 family, it meets the highest quality standards, enabling highly reliable designs with superior efficiency.
Housed in a bottom-side cooled TOLL package, it is designed for optimal power dissipation in various industrial applications.
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| Infineon Technologies AG | |
|---|---|
| Product Category | Transistors |
| Product Number | IGT65R055D2 |
| Product Name | Power - Gallium nitride (GaN) - GaN transistors - IGT65R055D2 |
| Package Type | PG-HSOF-8 |
