The IGT65R025D2 is a 650 V enhancement-mode gallium nitride (GaN) transistor designed for high-efficiency power conversion in applications such as PFC, LLC converters, and SMPS. It is packaged in a PG-HSOF-8 bottom-side cooled variant, with a thermal resistance from junction to case of 0.53 °C/W and a maximum operating junction temperature of 150 °C. The device has a maximum on-state resistance of 30 mΩ at 25 °C, a typical gate charge of 11 nC, and a pulsed drain current capability of 120 A. It exhibits zero reverse recovery charge, supports reverse conduction, and demonstrates high commutation ruggedness. The transistor is JEDEC qualified and features 2 kV HBM ESD protection. The continuous drain current is rated at 70 A at 25 °C case temperature.
The IGOT65R025D2 GaN power transistor allows for increased efficiency at high-frequency operation. As part of the CoolGaN™ 650 V G5 family, it meets the highest quality standards, enabling highly reliable designs with superior efficiency.
Housed in a bottom-side cooled TOLL package, it is designed for optimal power dissipation in various industrial applications.
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| Infineon Technologies AG | |
|---|---|
| Product Category | Transistors |
| Product Number | IGT65R025D2 |
| Product Name | Power - Gallium nitride (GaN) - GaN transistors - IGT65R025D2 |
| Package Type | PG-HSOF-8 |
