The IGLT65R035D2 is a 650 V enhancement-mode GaN transistor designed for high-efficiency power conversion in applications such as PFC, LLC, and SMPS. It is housed in a PG-HDSOP-16 package with a thermal resistance from junction to case of 0.81 °C/W and a maximum power dissipation of 154 W at 25 °C case temperature. The device exhibits a typical on-state resistance of 42 mΩ, a gate charge of 7.7 nC, and zero reverse recovery charge. It supports a continuous drain current of 48 A and a pulsed drain current of 97 A. The transistor operates with a junction temperature range of -55 °C to 150 °C and is JEDEC qualified. It features high ESD robustness of 2 kV HBM and is capable of reverse conduction.
The IGLT65R035D2 GaN power transistor allows for increased efficiency at high-frequency operation. As part of the CoolGaN™ 650 V G5 family, it meets the highest quality standards, enabling highly reliable designs with superior efficiency.
Housed in a top-side cooled TOLT package, it is designed for optimal power dissipation in various industrial applications.
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| Infineon Technologies AG | |
|---|---|
| Product Category | Transistors |
| Product Number | IGLT65R035D2 |
| Product Name | Power - Gallium nitride (GaN) - GaN transistors - IGLT65R035D2 |
| Package Type | PG-HDSOP-16 |
