The IGLT65R025D2 is a 650 V enhancement-mode GaN power transistor designed for high-efficiency power conversion in applications such as PFC, LLC, and SMPS. It is housed in a PG-HDSOP-16 package with a top-side cooled design for optimal thermal performance. The device features a maximum on-state resistance of 30 mΩ, a typical gate charge of 11 nC, and a pulsed drain current capability of 120 A. It exhibits zero reverse recovery charge and supports reverse conduction. The transistor operates with a junction temperature range of -55°C to 150°C and meets JEDEC qualification standards. Its low gate and output capacitance enable fast switching with minimal losses.
The IGLT65R025D2 GaN power transistor allows for increased efficiency at high-frequency operation. As part of the CoolGaN™ 650 V G5 family, it meets the highest quality standards, enabling highly reliable designs with superior efficiency.
Housed in a top-side cooled TOLT package, it is designed for optimal power dissipation in various industrial applications.
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| Infineon Technologies AG | |
|---|---|
| Product Category | Transistors |
| Product Number | IGLT65R025D2 |
| Product Name | Power - Gallium nitride (GaN) - GaN transistors - IGLT65R025D2 |
| Package Type | PG-HDSOP-16 |
