The IGLR60R190D1 is a 600V enhancement-mode GaN power transistor designed for high-efficiency switching in industrial, telecom, and datacenter SMPS applications. It is packaged in a PG-TSON-8-6 case and features a maximum drain-source voltage of 600V, a drain-source on-state resistance of 190 mΩ at 25°C, and supports a pulsed drain current of 23A. The device exhibits zero reverse-recovery charge, low gate and output charges, and is qualified to JEDEC standards JESD47 and JESD22 for industrial applications. Thermal resistance from junction to case is 2.25°C/W, and the operating junction temperature range is -40°C to 150°C.
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 448-IGLR60R190D1E8238XUMA1TR-ND |
| Product Name | Single FETs, MOSFETs |
| Polarity | N-Channel |
