The IGLD65R110D2 is a 650 V enhancement-mode gallium nitride (GaN) transistor designed for high-efficiency power conversion in industrial, telecom, and data center applications. It is housed in a PG-LSON-8 package measuring 8.10 mm x 8.10 mm with a height of 1.35 mm. The device has a maximum drain-source on-state resistance of 140 mΩ, a pulsed drain current rating of 30 A, and zero reverse recovery charge. It features ultra-fast switching, low gate and output charge (2.4 nC and 18 nC respectively), and 2 kV HBM ESD protection. The transistor is fully qualified according to JEDEC standards for industrial applications.
The IGLD65R110D2 GaN power transistor allows for increased efficiency at high-frequency operation. As part of the CoolGaN™ 650 V G5 family, it meets the highest quality standards, enabling highly reliable designs with superior efficiency.
Housed in a bottom-side cooled DFN package, it is designed for optimal power dissipation in various industrial and consumer applications.
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| Infineon Technologies AG | |
|---|---|
| Product Category | Transistors |
| Product Number | IGLD65R110D2 |
| Product Name | Power - Gallium nitride (GaN) - GaN transistors - IGLD65R110D2 |
| Package Type | PG-LSON-8 |
