The IGLD65R110D2 GaN power transistor allows for increased efficiency at high-frequency operation. As part of the CoolGaN™ 650 V G5 family, it meets the highest quality standards, enabling highly reliable designs with superior efficiency.
Housed in a bottom-side cooled DFN package, it is designed for optimal power dissipation in various industrial and consumer applications.
Summary of Features
650 V e-mode power transistor
Ultrafast switching
No reverse-recovery charge
Capable of reverse conduction
Low gate charge, low output charge
Superior commutation ruggedness
Low dynamic RDS(on)
High ESD robustness: 2 kV HBM - 1 kV CDM
Bottom-side cooled package
JEDEC qualified (JESD47, JESD22)
Benefits
Supports high operating frequency
Enables highest system efficiency
Enables ultrahigh power density designs
Supports BOM cost savings
Applications
AC-DC power conversion for telecom infrastructure
Data center and AI data center solutions
Photovoltaic
Power conversion
USB-C adapters and chargers
The IGLD65R110D2 GaN power transistor allows for increased efficiency at high-frequency operation. As part of the CoolGaN™ 650 V G5 family, it meets the highest quality standards, enabling highly reliable designs with superior efficiency.
Housed in a bottom-side cooled DFN package, it is designed for optimal power dissipation in various industrial and consumer applications.
Summary of Features
- 650 V e-mode power transistor
- Ultrafast switching
- No reverse-recovery charge
- Capable of reverse conduction
- Low gate charge, low output charge
- Superior commutation ruggedness
- Low dynamic RDS(on)
- High ESD robustness: 2 kV HBM - 1 kV CDM
- Bottom-side cooled package
- JEDEC qualified (JESD47, JESD22)
Benefits
- Supports high operating frequency
- Enables highest system efficiency
- Enables ultrahigh power density designs
- Supports BOM cost savings
Applications
- AC-DC power conversion for telecom infrastructure
- Data center and AI data center solutions
- Photovoltaic
- Power conversion
- USB-C adapters and chargers
