The IGLD65R055D2 is a 650 V enhancement mode gallium nitride (GaN) transistor designed for high-efficiency power conversion in industrial, telecom, and data center applications. It is packaged in a PG-LSON-8 surface-mount package measuring 8.10 mm × 8.10 mm with a maximum height of 1.35 mm. The device features a maximum on-state resistance of 70 mΩ, a pulsed drain current of 60 A, and zero reverse-recovery charge. It supports reverse conduction, has a gate charge of 4.7 nC, and exhibits a 2 kV HBM ESD rating. The transistor is fully qualified to JEDEC standards for industrial applications and operates with a junction temperature range of -55°C to 150°C.
The IGLD65R055D2 GaN power transistor allows for increased efficiency at high-frequency operation. As part of the CoolGaN™ 650 V G5 family, it meets the highest quality standards, enabling highly reliable designs with superior efficiency.
Housed in a bottom-side cooled DFN package, it is designed for optimal power dissipation in various industrial and consumer applications.
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| Infineon Technologies AG | |
|---|---|
| Product Category | Transistors |
| Product Number | IGLD65R055D2 |
| Product Name | Power - Gallium nitride (GaN) - GaN transistors - IGLD65R055D2 |
| Package Type | PG-LSON-8 |
