Infineon Technologies AG Power - Gallium nitride (GaN) - GaN transistors - IGLD65R055D2 IGLD65R055D2

The IGLD65R055D2 GaN power transistor allows for increased efficiency at high-frequency operation. As part of the CoolGaN™ 650 V G5 family, it meets the highest quality standards, enabling highly reliable designs with superior efficiency. Housed in a bottom-side cooled DFN package, it is designed for optimal power dissipation in various industrial and consumer applications. Summary of Features 650 V e-mode power transistor Ultrafast switching No reverse-recovery charge Capable of reverse conduction Low gate charge, low output charge Superior commutation ruggedness Low dynamic RDS(on) High ESD robustness: 2 kV HBM - 1 kV CDM Bottom-side cooled package JEDEC qualified (JESD47, JESD22) Benefits Supports high operating frequency Enables highest system efficiency Enables ultrahigh power density designs Supports BOM cost savings Applications AC-DC power conversion for telecom infrastructure Data center and AI data center solutions Industrial power supplies Photovoltaic USB-C adapters and chargers