Infineon Technologies AG Power - Gallium nitride (GaN) - GaN transistors - IGLD60R190D1 IGLD60R190D1

600 V CoolGaN™ e-mode power transistor for ultimate efficiency and reliability This product is not recommended for new designs. Please explore its successor IGLD65R140D2 The IGLD60R190D1 offers fast turn-on and turn-off speed, minimum switching losses and enables simple half-bridge topologies with the highest efficiency. It is certified through an extensive GaN-specific qualification process, exceeding industry standards. Housed in the bottom-side cooled LSON-8 (DFN 8x8) package, it enables ideal power disspation as required in modern USB-C adapter and chargers, or server and data center applications. Summary of Features E-mode HEMT – normally OFF switch Ultra fast switching No reverse-recovery charge Capable of reverse conduction Low gate charge, low output charge Superior commutation ruggedness JEDEC qualified (JESD47, JESD22) Bottom-side cooled Benefits Improves system efficiency Improves power density Enables higher operating frequency System cost reduction savings Reduces EMI Potential Applications Industrial Telecom Datacenter SMPS based on the half-bridge topology Charger/adapter Applications 48 V intermediate bus converter (IBC) Adapters and chargers LED lighting system designs LED strips and signage Telecommunication infrastructure